Magnetron sputtering apparatus

ABSTRACT

A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.

CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional application of U.S. patent application Ser. No.12/594,676, filed on Oct. 5, 2009 which claims the benefit of JapanesePatent Application No. 2007-101159, filed on Apr. 6, 2007, JapanesePatent Application No. 2008-052891, filed on Mar. 4, 2008, JapanesePatent Application No. 2008-052934, filed on Mar. 4, 2008 and JapanesePatent Application No. 2008-053981, filed on Mar. 4, 2008, the entiredisclosures of which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a magnetron sputtering apparatus whichperforms a preset surface processing on a target object such as a liquidcrystal display substrate or a semiconductor substrate.

BACKGROUND ART

A thin film forming process for forming a thin film of a metal or aninsulating material on a substrate is indispensable in the manufactureof a semiconductor device such as an IC or a liquid crystal displaydevice. A film forming method using a sputtering apparatus is used inthe thin film forming process. In this film forming method, a targetmade of a raw material for a thin film formation is used; and an argongas or the like is excited into plasma by a DC high voltage or a highfrequency power; and the target is activated by the gas excited intoplasma and is sputtered; and then it is deposited on a target substrate.

A film forming method using a magnetron sputtering apparatus is mainlyemployed as a sputtering film forming method. In this film formingmethod, to achieve a high film forming rate, magnets are arranged on arear surface of a target such that magnetic force lines are generated inparallel to each other on a target surface, thereby confining plasma onthe target surface and thus obtaining high-density plasma.

FIG. 14 is a configuration view illustrating major components of such aconventional magnetron sputtering apparatus. In the figure, a referencenumeral 101 denotes a target; 102, a target substrate on which a thinfilm is to be formed; 103, a plurality of magnets; 104, magnetic forcelines; and 105, a target 101's area which is eroded, i.e., an erosionarea.

As shown in FIG. 14, the plurality of magnets 103 are arranged on a rearsurface of the target 101 such that their N and S poles are orientedtoward predetermined directions. High frequency power (RF power) 106 orDC high voltage power 107 is applied between the target 101 and thesubstrate 102, so that plasma is excited on the target 101.

Meanwhile, the magnetic force lines 104 oriented from N poles to theiradjacent S poles are generated from the plurality of magnets 103installed on the rear surface of the target 101. A horizontal magneticfield (a magnetic force line component parallel to a target surface) ismaximized locally at a position on the target surface where a verticalmagnetic field (a magnetic force line component perpendicular to thetarget surface) is zero. In an area where the horizontal magnetic fieldcomponent is great, electrons are confined in the vicinity of the targetsurface, so that high-density plasma is obtained. As a result, theerosion area 105 is formed around this area.

Since the erosion area 105 is exposed to the higher-density plasmacompared to the other areas, consumption of the target 101 tends to begreat thereat. As a film formation is continued, a target material isconsumed in this area, so that the entire target has to be replaced. Asa result, the efficiency of the usage of the target 101 may bedeteriorated. Besides, as for the thickness of a thin film on the targetsubstrate 102 installed to face the target 101, since a film thicknessat a position corresponding to the erosion area 105 is thicker than filmthicknesses at the other areas, the uniformity of the entire filmthickness of the target substrate 102 may also be deteriorated.

Conventionally, there have been proposed methods in which a bar magnetis used as a magnet for generating magnetic fields, and the bar magnetis moved and rotated to move an erosion area as time passes, so that alocal consumption of target is substantially suppressed. That is, a timeaverage of target consumption is uniform and the uniformity of the filmthickness of a target substrate is improved (see, for example, PatentDocuments 1 to 3).

In these methods, each bar magnet has a configuration in which an N poleand an S pole are respectively positioned at surfaces opposite to eachother in its diametric direction while the same magnetic polarities arerespectively arranged in parallel in its lengthwise direction, or an Npole and an S pole are respectively positioned at surfaces opposite toeach other in its diametric direction while the same magnetic polaritiesare respectively arranged in a spiral shape in its lengthwise direction.Further, stationary bar magnets are positioned in the vicinity of movingor rotating bar magnets so that a closed circuit is formed at an erosionarea within the target. Each of these stationary bar magnets has aconfiguration in which an N pole and an S pole are respectivelypositioned at surfaces opposite to each other in its diametric directionwhile the same magnetic polarities are respectively arranged in parallelin its lengthwise direction.

In addition, there has been also proposed a method in which a pluralityof film-formation rotary magnets buried in a spiral shape is used tocontinuously form waves of a magnetic field (see, for example, PatentDocument 4).

Patent Document 1: Japanese Patent Laid-open Publication No. H5-148642

Patent Document 2: Japanese Patent Laid-open Publication No. 2000-309867

Patent Document 3: Japanese Patent No. 3566327

Patent Document 4: Japanese Patent Laid-open Publication No. 2001-32067

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

In the aforementioned conventional methods, however, the strength of barmagnets needs to be enhanced and the compact bar magnets need to bearranged more closely to each other, such that an instantaneous erosiondensity is increased, i.e., a ratio of erosion areas to an entire targetarea becomes high in order to increase a film forming rate on a targetsubstrate. However, with such a configuration, magnets or fixing rodsmay be distorted due to repulsive or attractive forces between themagnets, or it may be difficult to move or rotate the magnets againstthose forces. To elaborate, an attractive or repulsive force of about3000 N may be generated between the magnets, thereby causing someproblems. That is, metals supporting the magnets may be deformed, or atorque of about 30 N·m may be simultaneously generated whereby a verystrong motor may be needed, or it may become difficult to raise arotational speed. These problems cause deterioration of the uniformityof the film formation or reduction of apparatus lifetime.

Further, as the rotary magnet adjacent to its surrounding stationary barmagnets is rotated, there inevitably occurs a case where a phase of amagnetic pole of the rotary magnet becomes identical with a phase of amagnetic pole of the stationary bar magnet surrounding the rotarymagnet. In this case, a closed plasma region may not be formed.

Further, in film-formation rotary magnets buried in a spiral shape,although waves of a magnetic field are formed, a closed plasma loop maynot be formed, or strong forces may be generated between the adjacentrotary magnets so that it may be difficult to rotate the magnets againstthe forces.

In view of the foregoing, the present invention has been conceived tosolve the above-mentioned problems and provides a magnetron sputteringapparatus that increases an instantaneous plasma density on a target toincrease a film forming rate.

Further, the present invention also provides a magnetron sputteringapparatus that moves a plasma loop as time passes and prevents a localabrasion of a target to achieve uniform consumption thereof, therebyincreasing a lifetime of the target.

Moreover, the present invention also provides a magnetron sputteringapparatus having a magnet rotating mechanism and a long lifetime withoutimposing a great burden on a rotation device or a column-shaped rotationshaft.

Means for Solving the Problems

In accordance with a first aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes, and a torque applied to thecolumn-shaped rotation shaft due to an interaction between the rotarymagnet body and the stationary outer peripheral body is in a range ofabout 0.1 N·m to 1 N·m.

In accordance with a second aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes. A torque applied to thecolumn-shaped rotation shaft due to an interaction between the rotarymagnet body and the stationary outer peripheral body is in a range ofabout 0.1 N·m to 1 N·m, and a force applied to the column-shapedrotation shaft in one direction is in a range of about 1 N to 300 N.

In accordance with a third aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes, and a torque applied to thecolumn-shaped rotation shaft due to an interaction between the rotarymagnet body and the stationary outer peripheral body is in a range ofabout 0.1 N·m to 10 N·m.

In accordance with a fourth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes, and a torque applied to thecolumn-shaped rotation shaft due to an interaction between the rotarymagnet body and the stationary outer peripheral body is in a range ofabout 0.1 N·m to 100 N·m.

In accordance with a fifth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. A plurality of plasma loops isformed on the target surface.

In accordance with a sixth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. A plurality of plasma loops isformed on the target surface, and the plurality of plasma loops moves asthe magnet moves.

In accordance with a seventh aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. A plasma loop formed on the targetsurface is repeatedly generated, moves and disappears as the magnetmoves.

In accordance with an eighth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in any one of thefifth aspect to the seventh aspect, wherein the magnet may include arotary magnet body installed around a column-shaped rotation shaft in aspiral shape and a stationary outer peripheral body installed in thevicinity of the rotary magnet body in parallel to the target surface.The stationary outer peripheral body may be made of a magnet magnetizedin a direction perpendicular to the target surface or a ferromagneticbody which is not previously magnetized. The rotary magnet body mayrotate with the column-shaped rotation shaft, so that the plasma loop isgenerated, moves, and disappears.

In accordance with a ninth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. On the target surface, a plasmaloop is formed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists is in a rangeof about 500 Gauss to 1200 Gauss.

In accordance with a tenth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. On the target surface, a plasmaloop is formed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists is in a rangeof about 500 Gauss to 750 Gauss.

In accordance with an eleventh aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. On the target surface, a plasmaloop is formed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists has a minimumvalue in a range of about 25% to 65% of a maximum value.

In accordance with a twelfth aspect of the present invention, there isprovided a magnetron sputtering apparatus that includes a substrate tobe processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. On the target surface, a plasmaloop is formed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists has a minimumvalue in a range of about 65% to 100% of a maximum value.

In accordance with a thirteenth aspect of the present invention, thereis provided a magnetron sputtering apparatus that includes a substrateto be processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. On the target surface, a plasmaloop is formed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists has a minimumvalue in a range of about 75% to 100% of a maximum value.

In accordance with a fourteenth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe ninth aspect to the thirteenth aspect, wherein the magnet mayinclude a rotary magnet body installed around a column-shaped rotationshaft in a spiral shape; and a stationary outer peripheral bodyinstalled in the vicinity of the rotary magnet body in parallel to thetarget surface. The stationary outer peripheral body may be made of amagnet magnetized in a direction perpendicular to the target surface ora ferromagnetic body which is not previously magnetized. The rotarymagnet body may rotate with the column-shaped rotation shaft, so thatthe plasma loop is generated, moves, and disappears.

In accordance with a fifteenth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in any one of thefirst aspect to the fourth aspect or any one of the eighth aspect to thefourteenth aspect, wherein the rotary magnet body may include aplurality of spiral bodies formed around the column-shaped rotationshaft, and form a spiral-shaped magnet set in which adjacent spiralbodies in an axial direction of the column-shaped rotation shaft haveopposite magnetic poles of an N pole and an S pole on an outer side ofthe column-shaped rotation shaft in its diametrical direction. Thestationary outer peripheral body may be configured to surround therotary magnet body when viewed from the target, and may form magneticpoles of an N pole or an S pole on a side of the target or it may be notpreviously magnetized.

In accordance with a sixteenth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in the fifteenthaspect, wherein when the column-shaped rotation shaft and the rotarymagnet body are viewed from a direction perpendicular to an axis of thecolumn-shaped rotation shaft, an acute angle between a direction of themagnet forming a spiral and an axial direction of the column-shapedrotation shaft may be in a range of about 35° to 50°.

In accordance with a seventeenth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefifteenth aspect, wherein when the column-shaped rotation shaft and therotary magnet body are viewed from a direction perpendicular to an axisof the column-shaped rotation shaft, an acute angle between a directionof the magnet forming a spiral and an axial direction of thecolumn-shaped rotation shaft may be in a range of about 30° to 70°.

In accordance with an eighteenth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefifteenth aspect, wherein when the column-shaped rotation shaft and therotary magnet body are viewed from a direction perpendicular to an axisof the column-shaped rotation shaft, an acute angle between a directionof the magnet forming a spiral and an axial direction of thecolumn-shaped rotation shaft may be in a range of about 70° to 88°.

In accordance with a nineteenth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefifteenth aspect, wherein when the column-shaped rotation shaft and therotary magnet body are viewed from a direction perpendicular to an axisof the column-shaped rotation shaft, an acute angle between a directionof the magnet forming a spiral and an axial direction of thecolumn-shaped rotation shaft may be in a range of about 75° to 85°.

In accordance with a twentieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in any one of thefifteenth aspect to the nineteenth aspect, wherein the rotary magnetbody may be a spiral-shaped plate magnet set having plate magnetsinstalled on the column-shaped rotation shaft in a spiral shape to form2 spirals, and adjacent spirals in an axial direction of thecolumn-shaped rotation shaft may have opposite magnetic poles of an Npole and an S pole on the outer side of the column-shaped rotation shaftin its diametrical direction.

In accordance with a twenty first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe fifteenth aspect to the nineteenth aspect, wherein the rotary magnetbody may be a spiral-shaped plate magnet set having plate magnetsinstalled on the column-shaped rotation shaft in a spiral shape to form4, 6, 8 or 10 spirals, and adjacent spirals in an axial direction of thecolumn-shaped rotation shaft may have opposite magnetic poles of an Npole and an S pole on the outer side of the column-shaped rotation shaftin its diametrical direction.

In accordance with a twenty second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the fifteenth aspect to the twenty first aspect, wherein amagnet, which freely moves independently of the rotary magnet body andthe stationary outer peripheral body, may be installed in the vicinityof the rotary magnet body.

In accordance with a twenty third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the twentysecond aspect, wherein the magnet, which freely moves independently ofthe rotary magnet body and the stationary outer peripheral body, may beinstalled in the vicinity of the rotary magnet body, and when thecolumn-shaped rotation shaft is rotated, a torque and a force applied tothe column-shaped rotation shaft due to the interaction between therotary magnet body and the stationary outer peripheral body are alwayssmaller than those in a case where no magnet that freely moves may beprovided.

In accordance with a twenty fourth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the twentieth aspect to the twenty third aspect, wherein at leasta part of the column-shaped rotation shaft may be made of a paramagneticbody.

In accordance with a twenty fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe twentieth aspect to the twenty fourth aspect, wherein thecolumn-shaped rotation shaft may be made of a magnetic body having ahollow structure, and a thickness thereof may be set such that amagnetic flux density at an entire region in the magnetic body becomesequal to or less than about 65% of a saturated magnetic flux density ofthe magnetic body.

In accordance with a twenty sixth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe twentieth aspect to the twenty fifth aspect, wherein thecolumn-shaped rotation shaft may be made of a magnetic body having ahollow structure, and a thickness thereof may be set such that amagnetic flux density at an entire region in the magnetic body becomesequal to or less than about 60% of a saturated magnetic flux density ofthe magnetic body and smaller than a residual magnetic flux density ofthe magnet forming the rotary magnet body.

In accordance with a twenty seventh aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the twentieth aspect to the twenty sixth aspect, wherein thecolumn-shaped rotation shaft may be made of a magnetic body having ahollow structure, and a thickness thereof may be set such that amagnetic flux density at an entire region in the magnetic body becomessmaller than a residual magnetic flux density of the magnet forming therotary magnet body.

In accordance with a twenty eighth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the twentieth aspect to the twenty seventh aspect, wherein astationary outer peripheral paramagnetic body may be installed adjacentto the stationary outer peripheral body at a surface opposite to thetarget across the stationary outer peripheral body.

In accordance with a twenty ninth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe twentieth aspect to the twenty eighth aspect, wherein a unit thatallows a magnetic flux starting from the stationary outer peripheralbody to an outside of the target to be weaker than a magnetic fluxstarting from the stationary outer peripheral body to an inside of thetarget may be provided.

In accordance with a thirtieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in any one of thetwentieth aspect to the twenty ninth aspect, wherein the unit mayinclude a paramagnetic member installed to continuously cover an outerlateral surface of the stationary outer peripheral body when viewed fromthe target and a part of a target-side surface thereof.

In accordance with a thirty first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe twentieth aspect to the thirtieth aspect, wherein the rotary magnetbody and the stationary outer peripheral body may be movable in adirection perpendicular to the target surface.

In accordance with a thirty second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the twentieth aspect to the thirty first aspect, wherein therotary magnet body and the stationary outer peripheral body may beinstalled in a space surrounded by a target member, a backing plate towhich the target member is fixed, and a wall extended from the vicinityof the backing plate, and the space may be capable of beingdepressurized.

In accordance with a thirty third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the thirtysecond aspect, wherein a thickness of the backing plate may be thinnerthan an initial thickness of the target.

In accordance with a thirty fourth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the twentieth aspect to the thirty third aspect, wherein a unitthat relatively moves the substrate in a direction intersecting with theaxial direction of the column-shaped rotation shaft may be provided.

In accordance with a thirty fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus including a plurality ofmagnetron sputtering apparatuses as described in any one of thetwentieth aspect to the thirty fourth aspect provided in parallel toeach other in an axial direction of the column-shaped rotation shaft anda unit that relatively moves the substrate in a direction intersectingwith the axial direction of the column-shaped rotation shaft.

In accordance with a thirty sixth aspect of the present invention, thereis provided a magnetron sputtering apparatus including a plurality ofthe magnetron sputtering apparatuses as described in any one of thetwentieth aspect to the thirty fourth aspect and a unit that relativelymoves the substrate in a direction intersecting with the axial directionof the column-shaped rotation shaft. Each magnetron sputtering apparatushas a target material different to each other, and is provided inparallel to each other in an axial direction of the column-shapedrotation shaft.

In accordance with a thirty seventh aspect of the present invention,there is provided a magnetron sputtering apparatus that includes asubstrate to be processed, a target installed to face the substrate anda magnet installed at a side opposite to the substrate across thetarget, and confines plasma on a surface of the target by forming amagnetic field on the target surface by the magnet. A plurality ofplasma loops is formed on the target surface, a distance between thetarget surface and a surface of the substrate is set to be equal to orless than about 30 mm, and a magnetic field on the substrate surface isset to be equal to or less than about 100 Gauss.

In accordance with a thirty eighth aspect of the present invention,there is provided a magnetron sputtering apparatus that includes asubstrate to be processed, a target installed to face the substrate anda magnet installed at a side opposite to the substrate across thetarget, and confines plasma on a surface of the target by forming amagnetic field on the target surface by the magnet. A plurality ofplasma loops is formed on the target surface, a distance between thetarget surface and a surface of the substrate is set to be equal to orless than about 30 mm, and a magnetic field on the substrate surface isset to be equal to or less than about 20 Gauss.

In accordance with a thirty ninth aspect of the present invention, thereis provided a magnetron sputtering apparatus that includes a substrateto be processed, a target installed to face the substrate, a targetholding unit installed at a side opposite to the substrate across thetarget and a magnet installed to face the target via the target holdingunit, and confines plasma on a surface of the target by forming amagnetic field on the target surface by the magnet. A plurality ofplasma loops is formed on the target surface, and a thickness of thetarget holding unit is set to be equal to or less than about 30% of aninitial thickness of the target.

In accordance with a fortieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in the thirtyninth aspect, wherein a first space between the substrate and the targetmay be capable of being depressurized, a second space between the targetholding unit and the magnet may be capable of being depressurized, and apressure in the first space may be substantially the same as that in thesecond space.

In accordance with a forty first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefortieth aspect, wherein a thickness of the backing plate may be thinnerthan an initial thickness of the target.

In accordance with a forty second aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe thirty ninth aspect to the forty first aspect, wherein a coolingunit may be installed at the target holding unit.

In accordance with a forty third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fortysecond aspect, wherein the cooling unit may be installed in the secondspace and may be positioned close to both end portions of the targetholding unit.

In accordance with a forty fourth aspect of the present invention, thereis provided a magnetron sputtering apparatus that includes a substrateto be processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes. The target is fixed to abacking plate made of a metal, and the rotary magnet body is surroundedby a metal plate electrically connected with the backing plate. Amechanism that applies at least a high frequency power as a plasmaexcitation power to the target via the metal plate is Provided, and thehigh frequency power has a single frequency or a plurality offrequencies. A plurality of power feed points is arranged in a directionof the rotation shaft at a pitch shorter than a distance of about 1/10of a half-wavelength of the highest frequency of the high frequencypower in a vacuum.

In accordance with a forty fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus that includes a substrateto be processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shapeand a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body rotates with thecolumn-shaped rotation shaft, so that a pattern of the magnetic field onthe target surface moves as time passes, and a mechanism for generatinga magnetic field at a side opposite to the target across the substrateis provided.

In accordance with a forty sixth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fortyfifth aspect, wherein a mounting table that mounts thereon the substratemay be installed at a side opposite to the target across the substrate,and the mechanism for generating the magnetic field may be a magnetinstalled in the mounting table.

In accordance with a forty seventh aspect of the present invention,there is provided magnetron sputtering apparatus that includes asubstrate to be processed, a target installed to face the substrate anda magnet installed at a side opposite to the substrate across thetarget, and confines plasma on a surface of the target by forming amagnetic field on the target surface by the magnet. The magnet includesa rotary magnet body installed around a column-shaped rotation shaft ina spiral shape and a stationary outer peripheral body installed in thevicinity of the rotary magnet body in parallel to the target surface.The stationary outer peripheral body is made of a ferromagnetic body.The rotary magnet body rotates with the column-shaped rotation shaft, sothat a pattern of the magnetic field on the target surface moves as timepasses.

In accordance with a forty eighth aspect of the present invention, thereis provided a magnetron sputtering apparatus that includes a substrateto be processed, a target installed to face the substrate and a magnetinstalled at a side opposite to the substrate across the target, andconfines plasma on a surface of the target by forming a magnetic fieldon the target surface by the magnet. The magnet includes a rotary magnetbody installed around a column-shaped rotation shaft in a spiral shape;and a stationary outer peripheral body installed in the vicinity of therotary magnet body in parallel to the target surface. The stationaryouter peripheral body is made of a magnet magnetized in a directionperpendicular to the target surface or a ferromagnetic body which is notpreviously magnetized. The rotary magnet body includes a first spiralbody formed by installing a magnet, which is magnetized such that itssurface becomes an S pole or an N pole, at the column-shaped rotationshaft in a spiral shape and a second spiral body formed by installing aferromagnetic body, which is not previously magnetized, at thecolumn-shaped rotation shaft in a spiral shape to be adjacent to and inparallel to the first spiral body. The rotary magnet body rotates withthe column-shaped rotation shaft, so that a pattern of the magneticfield on the target surface moves as time passes.

In accordance with a forty ninth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fortyseventh aspect or the forty eighth aspect, wherein the rotary magnetbody may be configured to have a magnet structure featuring a target useefficiency equal to or higher than about 80%, which is determined by atarget consumption distribution determined based on a Larmor radius ofelectrons confined in the horizontal magnetic field and a curvatureradius of the magnetic field.

In accordance with a fiftieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in the fortyninth aspect, wherein the target consumption distribution may bedetermined by an erosion half-width which is determined based on theLarmor radius and the curvature radius of the magnetic field.

In accordance with a fifty first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefiftieth aspect, wherein the Larmor radius may be determined by usingthe following formula (1):

$\begin{matrix}\left\lbrack {{Eq}.\mspace{14mu} 1} \right\rbrack & \; \\{r_{c} = {34\frac{\sqrt{{V_{D\; C}}(V)}}{B({Gauss})}({mm})}} & (1)\end{matrix}$

Here, r_(c) is a Larmor radius, B is a magnetic flux density, and V_(DC)is a self-bias voltage.

In accordance with a fifty second aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thefiftieth aspect or the fifty first, wherein the erosion half-width isdetermined by using the following formula (2):

W≈2√{square root over (2Rr _(c))}(mm)   (2)

Here, W is an erosion half-width and R is a curvature radius of themagnetic field.

In accordance with a fifty third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe fiftieth aspect to the fifty second aspect, wherein the targetconsumption distribution may be determined based on a phase average ofthe erosion half-width when the rotary magnet body is rotated.

In accordance with a fifty fourth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the fifty third aspect, wherein the target useefficiency may be determined such that the target consumptiondistribution is substantially uniform across an entire surface of thetarget.

In accordance with a fifty fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the fifty fourth aspect, wherein the rotarymagnet body may include a plate magnet set having a plurality of platemagnets installed on the column-shaped rotation shaft to form aplurality of spirals, and, in the magnet structure, a distance betweenthe adjacent plate magnets of the plate magnet set may be set such thatthe target use efficiency is equal to or higher than about 80%.

In accordance with a fifty sixth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the fifty fifth aspect, wherein the rotarymagnet body may include a plate magnet set having a plurality of platemagnets installed on the column-shaped rotation shaft in a spiral shape,and in the magnet structure, a thickness of the plate magnet may be setsuch that the target use efficiency is equal to or higher than about80%.

In accordance with a fifty seventh aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the forty ninth aspect to the fifty sixth aspect, wherein therotary magnet body may include a plate magnet set having a plurality ofplate magnets installed on the column-shaped rotation shaft in a spiralshape, and in the magnet structure, a width of the plate magnet may beset such that the target use efficiency is equal to or higher than about80%.

In accordance with a fifty eighth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the fifty seventh aspect, wherein the rotarymagnet body may include a plate magnet set having a plurality of platemagnets installed on the column-shaped rotation shaft in a spiral shapewhile forming a single loop or multiple loops, and in the magnetstructure, the number of loops may be set such that the target useefficiency is equal to or higher than about 80%.

In accordance with a fifty ninth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the fifty eighth aspect, wherein the rotarymagnet body may include a plate magnet set having a plurality of platemagnets installed on the column-shaped rotation shaft in a spiral shape,and in the magnet structure, an angle formed between an extendingdirection of the plate magnets extended in the spiral shape and theaxial direction of the rotation shaft may be set such that the targetuse efficiency is equal to or higher than about 80%.

In accordance with a sixtieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in the fiftyninth aspect, wherein the angle may be in a range of about 57° to 85°.

In accordance with a sixty first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe forty ninth aspect to the sixtieth aspect, wherein the rotary magnetbody may include a plate magnet set including a plate magnet having anN-pole surface installed on the column-shaped rotation shaft in a spiralshape and a plate magnet having an S-pole surface installed on thecolumn-shaped rotation shaft in a spiral shape to be adjacent to theplate magnet having the N-pole surface, and a width of the plate magnethaving the N-pole surface may be different from a width of the platemagnet having the S-pole surface.

In accordance with a sixty second aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the sixtyfirst aspect, wherein the width of the plate magnet having the N-polesurface may be smaller than the width of the plate magnet having theS-pole surface.

In accordance with a sixty third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fiftyeighth aspect, wherein the number of the loops may be 1 or 2.

In accordance with a sixty fourth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in thesixtieth aspect, wherein the angle may be equal to or larger than about75°.

In accordance with a sixty fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fiftysixth aspect, wherein the thickness may be in a range of about 5 to 15mm.

In accordance with a sixty sixth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fortyeighth aspect, wherein a configuration of the first spiral body and/or aconfiguration of the second spiral body are/is set such that the targetuse efficiency, which is expressed by the following formula (3), isequal to or higher than about 80%:

Target use efficiency≡cross sectional area of an erosion part/An initialcross sectional area of the target   (3)

Here, the target use efficiency is calculated when a minimum thicknessof the target is about 5% of the initial thickness thereof.

In accordance with a sixty seventh aspect of the present invention,there is provided a magnetron sputtering apparatus as described in thesixty sixth aspect, wherein a distance between the first spiral body andthe second spiral body may be set such that the target use efficiency isequal to or higher than about 80%.

In accordance with a sixty eighth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the sixtyseventh aspect, wherein the distance may be in a range of about 11 to 17mm.

In accordance with a sixty ninth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe sixty sixth aspect to the sixty eighth aspect, wherein platethicknesses of the first spiral body and the second spiral body may beset such that the target use efficiency is equal to or higher than about80%.

In accordance with a seventieth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the sixtyninth aspect, wherein the plate thicknesses may be in a range of about 5to 15 mm.

In accordance with a seventy first aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the sixty sixth aspect to the seventieth aspect, wherein thenumber of loops of the first spiral body and the second spiral body maybe set such that the target use efficiency is equal to or higher thanabout 80%.

In accordance with a seventy second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theseventy first aspect, wherein the number of the loops may be in a rangeof about 1 to 5.

In accordance with a seventy third aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the sixty sixth aspect to the seventy second aspect, whereinwidths of the first spiral body and the second spiral body may be setdifferently such that the target use efficiency is equal to or higherthan about 80%.

In accordance with a seventy fourth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theseventy third aspect, wherein, of the first spiral body and the secondspiral body, the width of the spiral body that forms an N-pole on anouter side in a diametrical direction thereof may be set to be largerthan the width of the spiral body that forms an S-pole on an outer sidein a diametrical direction thereof.

In accordance with a seventy fifth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the sixty sixth aspect to the seventy fourth aspect, wherein anangle between an extending direction of the first spiral body and thesecond spiral body and the axial direction of the rotation shaft may beset such that the target use efficiency is equal to or higher than about80%.

In accordance with a seventy sixth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theseventy fifth aspect, wherein the angle may be in a range of about 57°to 84°.

In accordance with a seventy seventh aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theseventy fifth aspect, wherein the angle may be in a range of about 75°to 85°.

In accordance with a seventy eighth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theforty seventh aspect or the forty eighth aspect, wherein the magnetronsputtering apparatus may further include a holder configured to mountthe substrate; and a backing plate installed to face the holder so as tohold the target; and a plasma shielding plate installed between theholder and the backing plate. The shielding plate may be provided with aslit in a space between the substrate and the target, and a differencebetween a width of the slit and a width of the plasma may be withinabout 20 mm.

In accordance with a seventy ninth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theforty seventh aspect or the forty eighth aspect, wherein the magnetronsputtering apparatus may further include a holder configured to mountthe substrate; and a backing plate installed to face the holder so as tohold the target; and a plasma shielding plate installed between theholder and the backing plate. The shielding plate may be provided with aslit in a space between the substrate and the target, and a distancebetween the shielding plate and the target may be in the range of about3 to 15 mm.

In accordance with an eightieth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the fortyseventh aspect or the forty eighth aspect, wherein the magnetronsputtering apparatus may further include a moving magnet configured tobe movable in the apparatus. A strong magnetic field, generateddepending on a rotation coordinate of the rotary magnet set, may beweakened by moving the moving magnet along with a rotation of the rotarymagnet set.

In accordance with an eighty first aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theeightieth aspect, wherein the moving magnet may be movably installedbetween the rotary magnet set and the peripheral plate magnet or astationary outer peripheral ferromagnetic body.

In accordance with an eighty second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theeighty first aspect, wherein the moving magnet may have a rotation shaftand may be rotatable about the rotation shaft and may be magnetized in adirection perpendicular to a rotation direction. The moving magnet maybe installed between an end portion of the column-shaped rotation shaftand the outer peripheral plate magnet or the stationary outer peripheralferromagnetic body such that the rotation shaft of the moving magnet isperpendicular to the axial direction of the column-shaped rotationshaft. Further, the moving magnet may be rotated so as to weaken amagnetic field generated depending on the rotation coordinate of therotary magnet set when a polarity of an end portion of the rotary magnetset becomes the same as a polarity of a surface of the stationary outerperipheral magnet or the stationary outer peripheral ferromagnetic body,the surface facing the end portion.

In accordance with an eighty third aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theeighty first aspect, wherein the moving magnet may have a rotation shaftparallel to a rotation axis of the rotary magnet set between a lateralsurface of the column-shaped rotation shaft and the stationary outerperipheral plate magnet or the stationary outer peripheral ferromagneticbody, and may be rotatable about the rotation shaft and may bemagnetized in a direction perpendicular to a rotation direction.Further, the moving magnet may be rotated so as to weaken a magneticfield generated depending on the rotation coordinate of the rotarymagnet set when a polarity of a part of lateral surface of the rotarymagnet set becomes the same as a polarity of a surface of the stationaryouter peripheral magnet or the stationary outer peripheral ferromagneticbody, the lateral surface facing the surface.

In accordance with an eighty fourth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the eighty first aspect to the eighty third aspect, wherein themoving magnet may be installed between a lateral surface of thecolumn-shaped rotation shaft and the outer peripheral plate magnet orthe stationary outer peripheral ferromagnetic body to be movable in adirection parallel to a rotation axis of the rotary magnet set. Further,the moving magnet may be moved in the direction perpendicular to therotation axis of the rotary magnet set so as to weaken a magnetic fieldgenerated depending on the rotation coordinate of the rotary magnet setwhen a polarity of a part of lateral surface of the rotary magnet setbecomes the same as a polarity of a part of lateral surface of thestationary outer peripheral magnet or the stationary outer peripheralferromagnetic body, the lateral surface facing the surface.

In accordance with an eighty fifth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the eighty first aspect to the eighty fourth aspect, wherein themoving magnet may be a rotary magnet configured to be freely rotated.

In accordance with an eighty sixth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the eightieth aspect to the eighty fifth aspect, wherein asurface of the moving magnet may be covered with a non-magneticsubstance.

In accordance with an eighty seventh aspect of the present invention,there is provided a magnetic field control method of a magnetronsputtering apparatus as described in any one of the eightieth aspect tothe eighty sixth aspect, the method including: when, depending on arotation coordinate of the rotary magnet set, a polarity of a facingsurface of the rotary magnet set becomes the same as a polarity of afacing surface of the stationary outer peripheral magnet or thestationary outer peripheral ferromagnetic body, moving the moving magnetsuch that its polarity opposite to the polarity of the facing surfacesfaces toward the facing surfaces.

In accordance with an eighty eighth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theforty seventh aspect or the forty eighth aspect, wherein the magnetronsputtering apparatus may further include a collimator configured toallow travelling directions of sputtered target particles to be uniform.

In accordance with an eighty ninth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in theeighty eighth aspect, wherein the collimator may be installed betweenthe substrate and the target, and the travelling direction of thesputtered target particles may be allowed to be coincident with athickness direction of a film to be formed.

In accordance with a ninetieth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in the eightyninth aspect, wherein the collimator may be fixed to be adjacent to thetarget.

In accordance with a ninety first aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the eightyninth aspect, wherein the collimator may be configured to be movableaccording to a movement of the substrate.

In accordance with a ninety second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the eighty eighth aspect to the ninety first aspect, wherein themagnet may include a rotary magnet set having a plurality of platemagnets installed on the column-shaped rotation shaft in a spiral shapeto be rotatable and a stationary outer peripheral plate magnet installedin the vicinity of the rotary magnet set in parallel to the surface ofthe target and magnetized in a direction perpendicular to the surface ofthe target.

In accordance with a ninety third aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in any one ofthe eighty eighth aspect to the ninety second aspect, wherein thecollimator may be made of at least one of Ti, Ta, Al, and stainlesssteel.

In accordance with a ninety fourth aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the eighty eighth aspect to the ninety third aspect, wherein themagnetron sputtering apparatus may further include a removing unit whichremoves sputtered particles of the target material adhered to thecollimator.

In accordance with a ninety fifth aspect of the present invention, thereis provided a magnetron sputtering apparatus as described in the ninetyfourth aspect, wherein the removing unit may remove the sputteredparticles of the adhered target material by applying a voltage to thecollimator.

In accordance with a ninety sixth aspect of the present invention, thereis provided a target collimation apparatus installed in a magnetronsputtering apparatus as described in the forty seventh aspect or theforty eighth aspect and configured to allow travelling directions ofsputtered target particles to be uniformed, the apparatus including: acollimator configured to allow the travelling direction of the sputteredtarget particles to be uniformed.

In accordance with a ninety seventh aspect of the present invention,there is provided a target collimation apparatus as described in theninety sixth aspect, wherein the collimator may be made of at least oneof Ti, Ta, Al, and stainless steel.

In accordance with a ninety eighth aspect of the present invention,there is provided a target collimation apparatus as described in theninety seventh aspect, wherein the target collimation apparatus mayfurther include a removing unit which removes sputtered particles of thetarget material adhered to the collimator.

In accordance with a ninety ninth aspect of the present invention, thereis provided a target collimation apparatus as described in the ninetyeighth aspect, wherein the removing unit may remove sputtered particlesof the target material by applying a voltage to the collimator.

In accordance with a hundredth aspect of the present invention, there isprovided a magnetron sputtering apparatus as described in any one of theforty fourth aspect to the eighty sixth aspect and the eighty eighthaspect to the ninety ninth aspect, wherein the rotary magnet body andthe stationary outer peripheral body may be movable in the directionperpendicular to the surface of the target.

In accordance with a hundred first aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the forty fourth aspect to the eighty sixth aspect and the eightyeighth aspect to the hundredth aspect, wherein the rotary magnet bodyand the stationary outer peripheral body may be installed in a spacesurrounded by a target member, a backing plate to which the targetmember is fixed, and a wall extended from the vicinity of the backingplate, and the space may be capable of being depressurized.

In accordance with a hundred second aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the forty fourth aspect to the eighty sixth aspect and the eightyeighth aspect to the hundred first aspect, wherein the target may befixed to a backing plate and a thickness of the backing plate may bethinner than an initial thickness of the target.

In accordance with a hundred third aspect of the present invention,there is provided a magnetron sputtering apparatus as described in anyone of the fortieth aspect to the eighty sixth aspect and the eightyeighth aspect to the hundred second aspect, wherein a unit thatrelatively moves the substrate in a direction intersecting with theaxial direction of the column-shaped rotation shaft may be provided.

In accordance with a hundred fourth aspect of the present invention,there is provided a magnetron sputtering apparatus including a pluralityof magnetron sputtering apparatuses as described in any one of thefortieth aspect to the eighty sixth aspect and the eighty eighth aspectto the hundred second aspect provided in parallel to each other in anaxial direction of the column-shaped rotation shaft and a unit thatrelatively moves the substrate in a direction intersecting with theaxial direction of the column-shaped rotation shaft.

In accordance with a hundred fifth aspect of the present invention,there is provided a magnetron sputtering apparatus including a pluralityof the magnetron sputtering apparatuses as described in any one of thefortieth aspect to the eighty sixth aspect and the eighty eighth aspectto the hundred second aspect and a unit that relatively moves thesubstrate in a direction intersecting with the axial direction of thecolumn-shaped rotation shaft. Each magnetron sputtering apparatus has atarget material different to each other, and is provided in parallel toeach other in an axial direction of the column-shaped rotation shaft.

In accordance with a hundred sixth aspect of the present invention,there is provided a magnetron sputtering method for depositing amaterial of the target on a substrate to be processed while rotating thecolumn-shaped rotation shaft by using a magnetron sputtering apparatusas described in any one of the first aspect to the eighty sixth aspectand the eighty eighth aspect to the hundred fifth aspect.

In accordance with a hundred seventh aspect of the present invention,there is provided an electronic device manufacturing method includingperforming a film formation on a substrate to be processed by using asputtering method as described in the hundred sixth aspect.

In accordance with a hundred eighth aspect of the present invention,there is provided a magnetic recording medium manufacturing methodincluding performing a film formation on a substrate to be processed byusing a sputtering method as described in the hundred sixth aspect.

In accordance with a hundred ninth aspect of the present invention,there is provided a product including a thin film formed by a sputteringmethod as described in the hundred sixth aspect.

Effect of the Invention

In accordance with the present invention, there is provided a magnetronsputtering apparatus capable of increasing a film forming rate andpreventing a local abrasion of a target to achieve uniform consumptionthereof, thereby increasing a lifetime of the target, and also having amagnet rotating mechanism and a long lifetime without imposing a greatburden on a rotation device or a column-shaped rotation shaft.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration view of a magnetron sputteringapparatus in accordance with a first embodiment of the presentinvention;

FIG. 2 is a perspective view describing, in more detail, a magnet partof the magnetron sputtering apparatus shown in FIG. 1;

FIG. 3 is a view explaining an erosion formation in the presentinvention, wherein S poles are indicated by dots;

FIG. 4 is a graph showing a relationship between a horizontal magneticfield strength and a relative magnetic permeability of a column-shapedrotation shaft used in the magnetron sputtering apparatus of FIG. 1;

FIG. 5 is a graph showing a variation of a horizontal magnetic fieldstrength in a case where a stationary outer peripheral paramagneticbody, which forms a magnetic circuit with respect to a stationary outerperipheral plate magnet, is installed;

FIG. 6 is a photograph showing a change of plasma on a surface of atarget as time passes;

FIG. 7 is a photograph showing a state where a target is consumed for along period of time;

FIG. 8A is a diagram for describing a configuration in which a singlespiral-shaped plate magnet set is installed on a column-shaped rotationshaft and a function thereof; and FIG. 8B is a diagram for describing aconfiguration in which a plurality of spiral-shaped plate magnet sets isinstalled on the column-shaped rotation shaft and a function thereof,wherein S poles are indicated by dots;

FIG. 9 is a schematic diagram describing a magnetron sputteringapparatus in accordance with a third embodiment of the presentinvention;

FIG. 10 is a graph showing a relationship between a thickness of amagnetic body and a maximum magnetic flux density generated in themagnetic body;

FIG. 11 is a graph showing a relationship between the number of spiralsof spiral-shaped magnet sets, and a magnetic field strength, and aspiral angle;

FIG. 12 illustrates a magnetron sputtering apparatus in accordance witha second embodiment of the present invention;

FIG. 13 is a graph showing a relationship between a distance from asurface of a target and a horizontal magnetic field strength;

FIG. 14 illustrates a conventional magnetron sputtering apparatus;

FIG. 15A is a schematic configuration view illustrating a magnetronsputtering apparatus in accordance with a fourth embodiment of thepresent invention, and FIG. 15B is a diagram when viewed from adirection of an arrow X of FIG. 15A;

FIG. 16 is a schematic configuration view illustrating a magnetronsputtering apparatus in accordance with a fifth embodiment of thepresent invention;

FIG. 17 is a schematic diagram showing a relationship between an erosionhalf-width and a Larmor radius;

FIG. 18 is a graph showing a comparison between an actual measurementvalue and a calculation value of an erosion distribution on a surface ofa target in a sixth embodiment of the present invention;

FIG. 19 is a schematic diagram illustrating sizes of a column-shapedrotation shaft 2 and a spiral-shaped plate magnet set 3 in the sixthembodiment of the present invention;

FIG. 20 is a schematic diagram illustrating sizes of the column-shapedrotation shaft 2 and the spiral-shaped plate magnet set 3 in the sixthembodiment of the present invention;

FIGS. 21A and 21B are cross sectional views of a surface of a target 1perpendicular to a rotation axis of the column-shaped rotation shaft 2in the sixth embodiment of the present invention, wherein FIG. 21A showsthe target 1 before it is used and FIG. 21B shows the target 1 after itis used (consumed);

FIG. 22 is a plane view showing a shape of the spiral-shaped platemagnet set 3 in respective cases that a distance between magnets isabout 8 mm, 12 mm and 17 mm in the sixth embodiment of the presentinvention;

FIG. 23 is a diagram showing an erosion distribution when a distancebetween magnets of the spiral-shaped plate magnet set 3 is varied in thesixth embodiment of the present invention;

FIG. 24 is a diagram showing a relationship between a distance betweenmagnets, a use efficiency and a horizontal magnetic field in the sixthembodiment of the present invention;

FIG. 25 is a diagram showing a relationship between a plate thickness tmand a consumption distribution in the sixth embodiment of the presentinvention;

FIG. 26 is a diagram showing a relationship between a plate thickness tmand a use efficiency in the sixth embodiment of the present invention;

FIG. 27 is a plane view showing a relationship between the number (m) ofloops and an angle (α) of the spiral-shaped plate magnet set 3 in thesixth embodiment of the present invention;

FIG. 28 is a diagram showing a relationship between the number m ofloops of the spiral-shaped plate magnet set 3 and a consumptiondistribution in the sixth embodiment of the present invention;

FIG. 29 is a diagram showing a relationship between the number (m) ofloops, a use efficiency and a magnetic field strength in the sixthembodiment of the present invention;

FIG. 30 is a diagram showing a relationship between an angle (spiralangle) (α), a use efficiency and a magnetic field strength;

FIG. 31 is a diagram viewed from the target in case that an S-polemagnet width is set to be larger than an N-pole magnet width in thespiral-shaped plate magnet set 3 in the sixth embodiment of the presentinvention;

FIG. 32 is a diagram showing a relationship between the S-pole magnetwidth and a consumption distribution in FIG. 31;

FIG. 33 is a diagram showing a relationship between a use efficiency anda horizontal magnetic field strength when the S-pole and N-pole magnetwidths are varied in the sixth embodiment of the present invention;

FIG. 34 is a diagram showing an erosion distribution when a magnetdiameter is varied in the sixth embodiment of the present invention;

FIG. 35 is a diagram showing a relationship between a plasma loop widthand an erosion width when the magnet diameter is varied in the sixthembodiment of the present invention;

FIG. 36 is a diagram showing a positional relationship between thetarget 1, a substrate 10 to be processed, a plasma shield member 16 anda slit 18 in the sixth embodiment of the present invention;

FIG. 37 is a diagram showing a width of the slit 18 and a depositefficiency when a target-slit distance is varied in the sixth embodimentof the present invention;

FIG. 38 depicts a (bottom) perspective view to describe a magnet part ofa magnetron sputtering apparatus in more detail in accordance with aseventh embodiment of the present invention;

FIG. 39 is a diagram viewed from a direction of an arrow A2 of FIG. 38;

FIG. 40 is a schematic configuration view illustrating a magnetronsputtering apparatus in accordance with an eighth embodiment of thepresent invention;

FIG. 41 presents a perspective view (when viewed from the bottom) to amagnet part of the magnetron sputtering apparatus shown in FIG. 40 inmore detail;

FIG. 42 is a diagram viewed from a direction of an arrow A3 of FIG. 41;

FIG. 43 sets forth a perspective view (viewed from bottom) describing amagnet part of a magnetron sputtering apparatus in accordance with aninth embodiment of the present invention;

FIG. 44 is a plane view viewed from a direction of an arrow A4 of FIG.43;

FIG. 45 is a schematic configuration view illustrating a magnetronsputtering apparatus in accordance with a tenth embodiment of thepresent invention; and

FIG. 46 is a schematic configuration view illustrating a magnetronsputtering apparatus in accordance with an eleventh embodiment of thepresent invention.

EXPLANATION OF CODES

1: Target

2: Column-shaped rotation shaft

3: Spiral-shaped rotary magnet sets

4: Stationary outer peripheral plate magnet

5: Outer peripheral paramagnetic body

6: Backing plate

8: Coolant passage

9: Insulating member

10: Target substrate

11: Space in chamber

12: Feeder line

13: Cover

14: Outer wall

15: Paramagnetic body

16: Plasma shield member

17: Insulating member

18: Slit

19: Mounting table

20: Space

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings.

First Embodiment

A first embodiment of the present invention will be explained in detailwith reference to the accompanying drawings.

FIG. 1 is a cross sectional view illustrating a configuration of amagnetron sputtering apparatus (rotary magnet sputtering apparatus) inaccordance with the first embodiment of the present invention.

In FIG. 1, a reference numeral 1 denotes a target; 2, a column-shapedrotation shaft; 3, a plurality of plate magnet sets arranged in a spiralshape on a surface of the rotation shaft 2; 4, a stationary outerperipheral plate magnet positioned at an outer periphery; 5, an outerperipheral magnetic body positioned on the stationary outer peripheralplate magnet 4 to be opposite to the target; 6, a backing plate to whichthe target 1 is fixed; 15, a magnetic body configured to enclose thecolumn-shaped rotation shaft 2 and the spiral-shaped plate magnet sets 3except their target-facing sides; 8, a passage through which a coolantpasses; 9, an insulating member; 10, a substrate to be processed; 19, amounting table on which the substrate is to be placed; 11, a space in aprocessing chamber; 12, a feeder line; 13, a cover electricallyconnected with the processing chamber; 14, an outer wall forming theprocessing chamber; 16, a plasma shield member electrically connectedwith the outer wall 14; 17, an insulating member having a high plasmaresistance; and 18, a slit provided at the plasma shield member 17.

A DC power supply, a RF power supply and a matching unit are connectedto the feeder line 12. A power for plasma excitation is supplied fromthe DC power supply and the RF power supply to the backing plate 6 andthe target 1 via the matching unit, the feeder line 12 and a housing,and plasma is excited on a surface of the target. The plasma excitationmay be enabled only by a DC power or a RF power. Since a plasma densityis greatly increased if the RF power is applied, it may be possible toapply only the RF power to increase an ion irradiation amount onto thesubstrate 10 in a film forming process. Further, in order to increase afilm forming rate as well as the ion irradiation amount, both the RFpower and the DC power can be applied. Meanwhile, the plasma excitationmay be carried out only by the DC power when it is required to decreasethe ion irradiation amount. In this way, a means for the plasmaexcitation or a power level may be selected depending on film formingspecies or film forming conditions. Further, when the target 1 made ofan insulating material is used, the plasma is excited by the RF power.Although a frequency of the RF power may be typically selected within arange of several 100 kHz to several 100 MHz, it is desirable to select ahigh frequency in order to obtain high density and low electrontemperature plasma. In the present embodiment, a frequency of about13.56 MHz is employed.

The plasma shield member 16 also serves as a ground plate for the RFpower. The ground plate enables efficient plasma excitation even if thesubstrate 10 is in an electrically floating state. The magnetic body 15has a magnetic shield effect against a magnetic field generated frommagnets and also has an effect of reducing a variation in the magneticfield due to external factors in the vicinity of the target.

To describe the magnet part in more detail, FIG. 2 provides aperspective view of the column-shaped rotation shaft 2, the plurality ofspiral-shaped plate magnet sets 3 and the stationary outer peripheralplate magnet 4. Here, the plurality of spiral-shaped plate magnet sets 3serves as rotary magnet sets which are rotated as the column-shapedrotation shaft 2 is rotated.

Although the column-shaped rotation shaft 2 may typically be made of astainless steel, it may be desirable to form the column-shaped rotationshaft 2 partially or entirely with a magnetic material having a lowmagnetic reluctance, such as a Ni—Fe-based alloy having a high magneticpermeability or a Fe-based material. Further, in order to achieve astrong magnetic flux density on the target surface more efficiently, itis desirable that a saturated magnetic flux density is great. In thepresent embodiment, the column-shaped rotation shaft 2 is fabricated byusing SS400 (having a magnetic permeability equal to or greater thanabout 100 and a saturated magnetic flux density of about 2 T), which isa rolled steel for structures and contains Fe as a major component. Thecolumn-shaped rotation shaft 2 can be rotated by a gear unit and a motor(not shown).

The column-shaped rotation shaft 2 has a cross section of a regularhexadecagon and a length of each side is about 16.7 mm. A number ofrhombus-shaped plate magnets are installed on each surface of thecolumn-shaped rotation shaft 2, thus forming the plurality ofspiral-shaped plate magnet sets 3. The column-shaped rotation shaft 2has a configuration in which the magnets are installed at its outerperiphery, and it can be made thick easily, and it has a strength enoughto endure bending caused by a magnetic force applied to the magnets.

Desirably, each plate magnet constituting the spiral-shaped plate magnetsets 3 has a high residual magnetic flux density, a high coercive force,and a high energy product, such that a strong magnetic field is stablygenerated. For example, a Sm—Co-based sintered magnet having a residualmagnetic flux density of about 1.1 T, more desirably, a Nd—Fe—B-basedsintered magnet having a residual magnetic flux density of about 1.3 Tmay be employed. In the present embodiment, a Nd—Fe—B-based sinteredmagnet is used.

Each plate magnet of the spiral-shaped plate magnet sets 3 is magnetizedin a direction perpendicular to its plate surface, and the plate magnetsare fixed to the column-shaped rotation shaft 2 in a spiral shape toform a plurality of spirals. The adjacent spirals in an axial directionof the column-shaped rotation shaft have opposite magnetic poles, i.e.,an N pole and an S pole on outer sides of the column-shaped rotationshaft in its diametrical direction.

When viewed from the target 1, the stationary outer peripheral platemagnet 4 surrounds the rotary magnet sets made up of the spiral-shapedplate magnet sets 3, and it is magnetized such that a side facing thetarget 1 is an S pole. For the same reason as each plate magnet of thespiral-shaped plate magnet sets 3, a Nd—Fe—B-based sintered magnet isused as the stationary outer peripheral plate magnet 4.

Further, in order to prevent a temperature rise of the target, a coolantis circulated through the passage 8 to cool the target. Additionally oralternatively, cooling units may be installed in both spaces which arein the vicinity of upper sides of both ends of the backing plate 6 andbelow the rotary magnet sets 3. Moreover, for example, by settingpressures in both spaces (depressurized) above and below the backingplate and the target to be substantially same, the backing plate 6 canbe set to be thinner than an initial thickness of the target 1 and,desirably, to be about equal to or less than about 30% of the initialthickness of the target.

Now, referring to FIG. 3, an erosion formation in the present embodimentwill be explained in detail. As stated above, in case that thespiral-shaped plate magnet sets 3 are formed by arranging the pluralityof plate magnets on the column-shaped rotation shaft 2, an N pole of theplate magnet is substantially surrounded by S poles of other platemagnets when the spiral-shaped plate magnet sets 3 are viewed from thetarget side. FIG. 3 provides a schematic diagram showing such aconfiguration. In this configuration, magnetic force lines start fromthe N pole of the plate magnet 3 and end at the surrounding S poles. Asa result, a multitude of closed horizontal magnetic field regions(plasma loops) 301 are formed on the target surface spaced apart from aplate magnet surface at a certain distance. Further, the multitude ofplasma loops 301 are moved as the column-shaped rotation shaft 2 isrotated. In FIG. 3, the plasma loops 301 move in a direction indicatedby an arrow. Moreover, the plasma loops 301 are sequentially generatedfrom one end of the rotary magnet sets 3 and sequentially disappear atthe other end thereof.

Further, in the present embodiment, although the cross section of thecolumn-shaped rotation shaft 2 has the regular hexadecagon shape and theplate magnets are fixed to each surface, the cross section thereof mayhave a regular polygonal shape (e.g., a regular polygon with 32 sides)having a greater number of sides and the plate magnets are more denselyfastened thereto to obtain a smoother spiral shape. Alternatively, tocut manufacturing cost, it may be possible to employ a polygonal shape(e.g., a regular octagon shape) having a smaller number of sides as longas horizontal magnetic field loops are formed on the target surface.Alternatively, in order to make the adjacent plate magnets forming thespirals become close to each other, a cross section of the plate magnetmay not be a rectangular shape but it may be a trapezoid shape whoseouter side is greater in a diametrical direction of the rotation shaft.

Now, referring to FIG. 4, an effect of configuring the column-shapedrotation shaft 2 as a magnetic body will be explained.

In FIG. 4, a vertical axis and a horizontal axis indicate a horizontalmagnetic field strength of the plasma loop 301 and a relative magneticpermeability of the column-shaped rotation shaft 2, respectively, andthe graph shows a dependency of the horizontal magnetic field strengthupon the relative magnetic permeability of the column-shaped rotationshaft 2. In FIG. 4, it is normalized at a relative magnetic permeabilityof 1. As can be seen from FIG. 4, the horizontal magnetic field strengthincreases with a rise of the relative magnetic permeability of thecolumn-shaped rotation shaft 2. Especially, when the relative magneticpermeability is equal to or greater than 100, an increment of themagnetic field strength is about 60%. It is because magnetic force linescan be generated on the target efficiently as a result of reducing amagnetic reluctance of the plate magnets, which form a spiral, on theside of the column-shaped rotation shaft. Thus, a plasma confiningeffect can be improved when the plasma is excited, and damage inflictedon the substrate can be reduced due to a reduction of an electrontemperature of the plasma. Furthermore, as a plasma density increases, afilm forming rate can be enhanced.

Further, as shown in FIG. 5, in a case where the stationary outerperipheral paramagnetic body 5 is installed below the stationary outerperipheral plate magnet 4, the horizontal magnetic field strength isfound to be increased by about 10% as compared to a case where nostationary outer peripheral paramagnetic body 5 is installed. Further,in a case where a magnetic circuit having a low magnetic reluctance isformed between the rotary magnet set and the stationary outer peripheralplate magnet by extending a part of the stationary outer peripheralparamagnetic body 5 to a portion adjacent to the column-shaped rotationshaft 2 to be adjacent to the magnetic body portion of the column-shapedrotation shaft 2 via ferrofluid, it is found that the horizontalmagnetic field strength is increased by about 30% and a film formingefficiency is improved.

The column-shaped rotation shaft 2 is desirably configured to belight-weighted with a hollow structure so as to suppress its deformationwhen the apparatus is scaled-up and to be rotated by a small torque.Here, it was examined how thin the magnetic body may be to achieve amagnetic circuit forming effect.

FIG. 10 shows a relationship between a thickness of the magnetic bodyand a maximum magnetic flux density generated in the magnetic body. Aresidual magnetic flux density of the spiral-shaped magnet(Ne—Fe—B-based magnet) is about 1.3 T; a magnetic permeability of themagnetic body (SS400) is about 100; and a saturated magnetic fluxdensity is about 2 T.

The thickness was varied from about 1 mm to 10 mm. As can be seen fromthe figure, since the magnetic field in the magnetic body is almostsaturated within the thickness range of about 1 mm to 2 mm, a magneticcircuit forming effect is not shown in this range. If the thickness isabout 4 mm, it is found that the maximum magnetic flux density in themagnetic body becomes about 1.3 T which is equivalent to about 65% of amaximum saturated magnetic flux density, so that the magnetic circuitforming effect is exhibited. If the thickness is about 6 mm, a magneticflux density in the entire region of the magnetic body becomes about 1.2T or less, which is equivalent to or less than about 60% of the maximumsaturated magnetic flux density of the magnetic body, so that it becomessmaller than the residual magnetic flux density of the magnet. In thiscase, it is found out that a horizontal magnetic field on the targetsurface exceeds about 500 Gauss and such an effect does not change evenif the thickness is further increased. Thus, by setting a thickness ofthe magnetic body to be about 6 mm, a light-weight design and a magneticcircuit formation can be achieved at the same time.

In the present experiment example, the spiral magnet structure has 8spirals, and the adjacent spirals in an axial direction of thecolumn-shaped rotation shaft 2 have opposite magnetic poles, i.e., an Npole and an S pole on outer sides of the column-shaped rotation shaft inits diametrical direction. That is, there are provided 4 spiral platemagnet sets which have the N pole on outer sides in a diametricaldirection, and 4 spiral plate magnet sets which have the S pole on outersides in a diametrical direction. Although at least two spirals arenecessary to form opposite magnetic poles, i.e., an N pole and an S poleon outer sides in a diametrical direction, an 8-sprial structure isemployed in the present invention. Therefore, when the column-shapedrotation shaft and the spiral plate magnet sets are viewed from adirection perpendicular to an axis of the column-shaped rotation shaft,an acute angle (hereinafter, referred to as a spiral angle) between adirection of a row of magnets forming the spiral and an axial directionof the column-shaped rotation shaft is set to be about 41°, so that asharply inclined spiral structure is obtained.

FIG. 11 shows the number of spirals of the spiral magnet sets, and thecorresponding spiral angles, and a maximum horizontal magnetic field anda minimum horizontal magnetic field on closed plasma loops. A thicknessof the spiral magnet is set to be about 12 mm and a substantial width1101 shown in FIG. 11 is 11 mm. It can be seen that, if the number ofthe spirals increases, the spiral angle is reduced while the maximumhorizontal magnetic field is increased. It can be seen that, if the8-spiral structure is employed as in the present embodiment, the spiralangle becomes 41° and, at the same time, the maximum horizontal magneticfield on the plasma loops exceeds 500 Gauss. In this manner, if thethickness and the width of the magnet are once selected, the horizontalmagnetic field can be efficiently generated by reducing the spiral angleby increasing the number of the spirals. Such an effect is found to bedominant in case the spiral angle is in the range of about 30° to 70°,desirably, 35° to 50°.

From the above, it can be seen that the horizontal magnetic field of theerosion area 301, i.e., the strength of a magnetic field parallel to thetarget surface exceeds 500 Gauss, so that strength sufficient enough forconfining the plasma can be obtained.

In order to form a closed loop of high-density plasma, it is necessaryto install a stationary magnet around a rotary magnet. However, it isalso required to reduce a force and a torque generated at thecolumn-shaped rotation shaft 2 due to the stationary magnet so as tooperate the apparatus stably for a long period of time.

For example, as shown in FIG. 8B, though a configuration, in which aplurality of column-shaped rotation shafts where plate magnets arearranged in a spiral shape, contributes to a throughput improvement byenlarging an erosion area and a film forming area on the targetsubstrate, the adjacent rotation shafts need to have same-polaritymagnets to form a closed high-density plasma loop. Accordingly, arepulsive force and a torque generated at the column-shaped rotationshaft increase, which is unsuitable for the purpose of reducing them.

In the present experiment example, as shown in FIG. 8A, spiralstructures having opposite polarities are arranged alternately, so thatsurrounding stationary magnets are magnetized in the same verticaldirection. Therefore, when viewed from the surrounding magnets, N polesand S poles of the rotary magnet sets become alternately close, so thata repulsive force and an attractive force are offset, whereby the forceand the torque are substantially applied only at both end portions ofthe rotation shaft. In the present experiment example, the force and thetorque applied to the column-shaped rotation shaft was measured, and theforce in a vertical direction was about 220 N and the force in ahorizontal direction (rotational direction) was about 60 N. Further, arotation torque was about 0.75 (N·m). Compared to a typical example of aconventional apparatus, both values can be greatly reduced. Thus, thecolumn-shaped rotation shaft 2 can be easily rotated by a small motor.

FIG. 6 illustrates a state where plasma excitation is performed whilerotating the column-shaped rotation shaft 2. FIG. 6 provides photographsshowing a change of plasma on the target surface as time passes. As forconditions of the plasma excitation, an argon gas was introduced at arate of about 1000 cc per minute, and an RF power of about 13.56 MHz wasapplied at a power level of about 800 W. Further, the column-shapedrotation shaft 2 was rotated at about 1 Hz. Plasma could be stablyexcited until the column-shaped rotation shaft 2 was rotated up to about5 Hz. As can be seen from the left photograph of FIG. 6 (which shows,from top to bottom, a state of change as time passes), a plasma loop(erosion loop) 601 is stably generated from a left end of the rotationshaft and is moved with the rotation of the shaft. Further, as can beseen from the right photograph of FIG. 6 (which shows, from top tobottom, a state of change as time passes), the plasma loop 601disappears stably to a right end of the rotation shaft. Further, FIG. 7illustrates an image of a consumed state of the target after it has beendischarged for a long time. From the figure, it can be seen that thesurface of the target 1 is consumed not locally but uniformly.

Meanwhile, if the backing plate 6 becomes thinner, the target 1 becomescloser to the magnets, so that the horizontal magnetic field strength onthe surface of the target 1 is further increased. If the horizontalmagnetic field strength increases, the plasma confining effect improves,so that the film forming rate increases or the plasma excitationefficiency improves. Thus, by enabling the space 20 to be depressurizedand setting the backing plate 6 to have a thickness smaller than theinitial thickness of the target 1, the film forming rate can be furtherimproved.

Moreover, since the target 1 is uniformly consumed and the magnets ismoved in a vertical direction according to the consumption of the target1, a horizontal magnetic field having high reproducibility and the samestrength can always be formed at all positions on the target surface, sothat film formation reproducibility improves when the apparatus iscontinuously operated for a long period of time.

Second Embodiment

A second embodiment of the present invention will be explained in detailwith reference to FIG. 12. Descriptions of the same parts as those ofthe aforementioned embodiment will be omitted for the simplicity ofdescription. A magnetron sputtering apparatus in accordance with thepresent invention has two spirals. It can be seen from FIG. 11 that incase of two spirals, a difference between a maximum horizontal magneticfield and a minimum horizontal magnetic field becomes small. If amagnetic field in a loop is uniform, a plasma density in the loopbecomes uniform, so that a uniformity of consumption of a target 1caused by rotation of a magnet is more effectively enhanced. This isbecause a direction of a peripheral stationary magnet becomes nearlyperpendicular to a direction of a spiral magnet. In this case, a spiralangle is about 79°. It can be seen that in order to obtain such auniformity effectively, a spiral angle is desirably in a range of about70° to 88° and, more desirable, in a range of about 75° to 85°. As canbe seen from FIG. 11, in case of using magnets having substantially thesame thickness and the same width, a value of the maximum magnetic fielddecreases as the number of spirals is reduced. In this case, a plasmadensity is decreased and a film forming rate is also decreased,resulting in a deterioration of a throughput of the apparatus.Accordingly, in the present embodiment, a thickness of the magnet isincreased from about 12 mm to about 20 mm, and strength of a horizontalmagnetic field on a target surface is increased. As a result, a maximumhorizontal magnetic field in a loop is about 654 Gauss and a minimumhorizontal magnetic field is about 510 Gauss and thus it is possible toaccomplish a distribution of the horizontal magnetic fields more thanabout 500 Gauss in all loops. In this case, a minimum value of thehorizontal magnetic field reaches about 78% of a maximum value thereof,so that uniformity which is difficult to achieve in case of using eightspirals can be ensured.

In the present embodiment, such a freely rotatable magnet as denoted bya reference numeral 1201 in FIG. 12 is provided between a magnetic bodycover and a rotary magnet. This magnet 1201 is configured to be freelyrotatable on a shaft 1202. Accordingly, whenever a spiral magnet isrotated, the magnet 1201 is freely rotated and generates an attractionforce with respect to a column-shaped rotation shaft. With thisconfiguration, deformation of the shaft caused by gravity can beprevented, and even if the shaft is elongated, it is not easilydeformed.

Further, in the present embodiment, a distance between a substrate to beprocessed and a target surface is set to about 25 mm. FIG. 13illustrates a relationship between a distance from the target surfaceand a horizontal magnetic field. A negative side on a horizontal axiscorresponds to a magnet side and a positive side corresponds to asubstrate side. In a sputtering film forming method of the presentembodiment, film forming uniformity is good and a strong magnetic fieldof about 500 Gauss or more is generated on the target surface, so thatplasma is excited only in a vicinity of the target surface. As can beseen from FIG. 13, when the distance between the target surface and thesubstrate is about 25 mm, strength of the magnetic field at thatposition is about 100 Gauss or less which is about ⅕ or less of thestrength of the magnetic field on the target surface, so that plasmaexcitation is hardly affected. Accordingly, it can be seen that even ifthe target is brought close to the substrate at a distance of about 30mm or less or desirably, about 20 mm or less, a uniform film can beformed because the magnet is rotated. Further, by researching aconfiguration of the magnet, the magnetic field on a surface of thesubstrate can be set to about 20 Gauss or less. In this way, thesubstrate to be processed is brought close to the target surface, sothat a film forming particle sputtered from the target is scarcelyadhered to a wall of a processing chamber or a shield member and isadhered to the substrate to be processed. Accordingly, a film formationcan be performed with high target use efficiency.

Third Embodiment

A third embodiment of the present invention will be explained in detailwith reference to the drawings. Further, descriptions of the same partsas those of the aforementioned embodiments will be omitted for thesimplicity of description. A magnetron sputtering apparatus inaccordance with the present invention is especially suitable to be usedas a reciprocating film forming apparatus as illustrated in FIG. 9.

In FIG. 9, a reference numeral 401 denotes a processing chamber; areference numeral 402 denotes a gate valve; a reference numeral 403denotes a substrate to be processed; and a reference numeral 404 is arotary magnet plasma exciting unit of the third embodiment. The lengthof the spiral in a direction of the axis is set to about 307 mm in thefirst embodiment, whereas it is set to about 270 mm in this embodiment.A frequency of plasma excitation power is set to about 13.56 MHz.However, the frequency is desirably as high as about 100 MHz in order toachieve a high plasma density and a low temperature electron. A lengthof the plasma exciting unit is about 2.7 m, while a wavelength at afrequency of about 100 MHz is about 3 m. In this way, if the length ofthe exciting unit is nearly the same as the wavelength, a standing wavemay be excited, resulting in non-uniform plasma. If the frequency isabout 13.56 MHz, the wavelength thereof is about 22.1 m. Therefore, thelength of the plasma exciting unit is sufficiently shorter than thewavelength and thus the plasma does not become non-uniform due to thestanding wave.

In the present embodiment, four rotary magnet plasma exciting units 404are used. Therefore, it is possible to substantially increase a filmforming rate. The number of the exciting units is not limited to four.The substrate 403 is a glass substrate having a size of about 2.2 m×2.5m. In the present embodiment, the lengthwise side of the substrate isabout 2.5 m and the substrate is reciprocated in a directionperpendicular to a column-shaped rotation shaft serving as a rotarymagnet plasma exciting unit, so that a substantially uniform film can beformed on the substrate. In order to form a uniform film, the substrate403 may be moved in one direction instead of being reciprocated, or therotary magnet plasma exciting unit 404 may be moved. In the presentembodiment, by reciprocating the substrate 403, a part of the substrateis consecutively exposed to a plasma region in which the plasma isexcited by the rotary magnet plasma exciting unit, so that a uniformthin film can be formed. A rotation speed of the rotary magnet is set tobe shorter than a transit time of the substrate, so that it is possibleto form a uniform film without instantaneous influence of an erosionpattern. Typically, a transit speed of the substrate is about 60sec/sheet and a rotation speed of the rotary magnet is about 10 Hz.Moreover, in the present embodiment, the substrate to be processed isreciprocated, but the film forming apparatus may be configured to form afilm by passing the substrate through one or more rotary magnet plasmaexciting units only once.

Fourth Embodiment

A fourth embodiment of the present invention will be explained in detailwith reference to FIG. 15. Descriptions of the same parts as those ofthe aforementioned embodiments will be omitted for the simplicity ofdescription. In a magnetron sputtering apparatus in accordance with thepresent invention, a power feed point that supplies a plasma excitationpower into a backing plate 6 and a target 1 is divided into plural ones.

Above all, there will be explained a problem of a conventional apparatushaving only one power feed point.

In a magnetron sputtering apparatus, as a substrate to be processed isscaled up, a length of a rotation shaft of a rotary magnet is increased.For example, in order to process a large-sized glass substrate having asize of about 2.88 m×3.08 m, a sputtering apparatus having a rotationshaft of about 3.2 m in length is necessitated. The target also has alength equivalent to the rotation shaft. When the target has such alength, a length of the target is equivalent to the wavelength of a highfrequency power. Thus, for example, if plasma is excited by feeding apower from only one central point, a standing wave is generated and thusthe plasma becomes non-uniform. Furthermore, since high current flows inan axis direction due to high current flowing from the plasma, anunintended voltage is generated due to an inductance effect, resultingin deterioration of uniformity.

Hereinafter, there will be explained a magnetron sputtering apparatushaving a power feed point which is divided into plural ones.

FIG. 15 illustrates a schematic view of a magnetron sputtering apparatusin accordance with the present invention. A reference numeral 2 denotesa rotary magnet set (column-shaped rotation shaft); a reference numeral1 denotes a target; a reference numeral 6 denotes a backing plate; areference numeral 15 a denotes a metal plate surrounding the rotarymagnet set 2 and electrically connected with the backing plate; areference numeral 12 a is a power supply for generating a high frequencypower by which plasma is excited; and a reference numeral 12 b is apower feed point for applying the high frequency power to the target. Inthe drawings, FIG. 15A is a cross sectional view perpendicular to therotation shaft and FIG. 15B is a diagram viewed from a lateral side ofthe rotation shaft (viewed from a direction of an arrow X of FIG. 15A).Since the apparatus processes a substrate of about 3 m×3 m size, alength of the target in the axis direction is about 3.2 m which islonger than the length of the substrate.

A frequency of the high frequency power is about 13.56 MHz.Representative frequencies of powers, half-wavelengths in a vacuum and1/10 (one tenth) values thereof are provided in Table 1 below.

TABLE 1 Half-wavelength(m) Half-wavelength/10(m) Frequency(MHz) invacuum in vacuum 13.56 11.1 1.11 27 5.6 0.56 40 3.8 0.38 100 1.5 0.15

At a frequency of 13.56 MHz, the half-wavelength in a vacuum is 11.1 m.The plasma is excited via a sheath, i.e., a space charge layer having athickness of several mm between a target surface and the plasma. Thatis, the sheath exists between the plasma and the target.

Since the plasma serves as a good conductor, parallel plate lines areformed by the plasma and the target in the axis direction. If anelectromagnetic wave is propagated to the parallel plate lines, itswavelength becomes equal to a wavelength in a vacuum. A wavelength is ininverse proportion to a frequency, and at a frequency of 13.56 MHz, thehalf-wavelength is 11.1 m which can not be neglected in consideration ofthe target length of about 3.2 m.

A high frequency is more advantageous to obtain high density plasma withlow electron temperature which are efficient for improvement in a filmforming rate or for decrease in damage. Therefore, it is efficient touse a power with a frequency of about 100 MHz.

In this case, the vacuum half-wavelength is about 1.5 m which is shorterthan the target length of about 3.2 m. When the wavelength issubstantially equivalent to the target length in this way, if a power isfed at a certain point, a standing wave is generated and thusnon-uniform plasma is excited.

Further, a parasitic inductance necessarily exists in the target. When aparasitic inductance per unit length is expressed as L, impedance of2πf×L is generated. If a high current I of several to several tens ofampere flows from the plasma in the axis direction of the target, avoltage of 2πf×L×I is generated, so that there occurs a problem that apower does not reach a distant position from the power feed point.

Since the impedance is proportional to the frequency, the aforementionedeffect becomes conspicuous as the frequency increases.

In order to suppress such an effect, by dividing the power feed pointinto plural ones to set a pitch of the power feed point to be about 1/10or less of the vacuum half-wavelength, the distant position from thepower feed point does not exist and the current flowing into one powerfeed point is reduced. That is, the present inventor found thatuniformity could be obtained by reducing the current flowing in the axisdirection of the target.

In the present embodiment, since a high frequency power of about 13.56MHz is used and 1/10 of the vacuum half-wavelength is 1.11 m, four powerfeed points are provided at a distance of about 0.8 m shorter than thevacuum half-wavelength. In this way, it is possible to form a film on alarge-sized substrate of about 3 m×3 m size without deterioration ofplasma uniformity and uniformity of film formation. In the presentembodiment, only a high frequency power of about 13.56 MHz is used toexcite the plasma, but the frequency is not limited thereto. Therefore,it may be possible to superpose a DC power or a power having a differentfrequency thereon.

Fifth Embodiment

A fifth embodiment of the present invention will be explained in detailwith reference to FIG. 16. Descriptions of the same parts as those ofthe aforementioned embodiments will be omitted for the simplicity ofdescription. In a magnetron sputtering apparatus in accordance with thepresent invention, a magnet 19 a for generating a magnetic field isprovided within a mounting table 19 for mounting a substrate 10 to beprocessed, i.e., at a side opposite to a target 1 across the substrate.

In FIG. 16 illustrating the embodiment of the present invention, areference numeral 2 denotes a rotary magnet set (column-shaped rotationshaft); a reference numeral 10 denotes a substrate to be processed; areference numeral 19 denotes a mounting table for mounting the substrate10 and provided at a side opposite to a target 1 across the substrate10; and a reference numeral 19 a is an in-stage magnet installed withinthe mounting table 19, for generating a magnetic field. If there is nomagnet installed within the mounting table 19, magnetic force linesgenerated from an N-pole magnet which is a spiral magnet positioned in aplasma loop illustrated in FIG. 3 and generated by a spiral-shapedrotary magnet reach the substrate 10, so that plasma is simultaneouslytransported along the magnetic force lines and plasma damage occursduring a film formation. If the in-stage magnet 19 a forms an N-poletoward the target 1, it is possible to control the magnetic force linesnot to reach the substrate 10 and to detour in a horizontal direction.Accordingly, a film formation can be performed without the plasmareaching the substrate 10, and in particular, the film formation can beperformed without damage to the substrate 10 in its early stage.Further, in the present embodiment, in order for the magnetic forcelines generated from the N-pole magnet, i.e., the spiral magnetpositioned in the plasma loop not to reach the substrate 10, thein-stage magnet also forms an N-pole toward the target. However,depending on a design of the spiral magnet, magnetic force linesgenerated from a magnet positioned between loops may reach the substrate10. Therefore, polarity of the in-stage magnet 19 a needs to beappropriately changed. Furthermore, the in-stage magnet 19 a isinstalled within the mounting table 19 in the present embodiment but itsposition is not limited thereto, so that a stationary magnet may beinstalled under the target 1 or under the mounting table 19 or themagnetic field may be generated by a current.

Sixth Embodiment

A sixth embodiment of the present invention will be explained in detailwith reference to FIGS. 17 to 37. Descriptions of the same parts asthose of the aforementioned embodiments will be omitted for thesimplicity of description. A magnetron sputtering apparatus inaccordance with the present invention includes a rotary magnet inaccordance with the first embodiment having a magnet configuration inwhich a target use efficiency that is determined by a target consumptiondistribution determined based on Larmor radius of electron confined inthe horizontal magnetic field and a radius of curvature of the magneticfield is set to be about 80% or more.

A configuration of the magnetron sputtering apparatus is the same asillustrated in FIG. 1. Therefore, description thereof will be omitted.

As shown in FIG. 7, local consumption of a target in the magnetronsputtering apparatus in accordance with the first embodiment isremarkably improved as compared to a conventional sputtering apparatus.

It can be seen that an erosion, that is, consumption distribution isuniform in a rotation axis direction of the target, i.e., in aproceeding direction of a plasma loop, whereas the consumptiondistribution of the target is not uniform in a direction perpendicularto the rotation axis direction (proceeding direction of the plasmaloop). In other words, as shown in FIG. 18 with actual measurementvalues, both end portions of the target (end portions of the plasmaloop) are greatly consumed as compared to a central portion of thetarget.

In order to find a relationship between a consumption distribution ofthe target surface and a configuration of the apparatus, the presentinventors considered the followings.

The present inventors took notice of Larmor radius of electrons confinedin the magnetic field.

As illustrated in FIG. 17, the Larmor radius r_(c) of electrons confinedin the magnetic field is a radius of a circle when a charged particle inthe magnetic field makes a circular motion by a Lorentz force. If acircular horizontal magnetic loop having a perfect axial symmetry isformed, there is a relationship between an erosion half-width and theLarmor radius as follows.

W: Erosion half-width

R: Radius of curvature of horizontal magnetic field

r_(c): Larmor radius

Here, if the radius of curvature of horizontal magnetic field issufficiently larger than the Larmor radius, the erosion half-amplitudecan be derived from the following Formula b.

[Eq. 3]

W≈2√{square root over (2Rr _(c))} . . . Formula b   (Formula 2)

The Larmor radius can be expressed as follows.

$\begin{matrix}\left\lbrack {{Eq}.\mspace{14mu} 4} \right\rbrack & \; \\{r_{c} = \frac{m_{e}v_{\bot}}{eB}} & {{Formula}\mspace{14mu} c}\end{matrix}$

m_(e): Electron mass

V_(⊥): Electron velocity component perpendicular to the magnetic field

e: Elementary electric charge

B: Magnetic flux density

Further, a secondary electron generated from the target is acceleratedby a sheath electric field in a direction perpendicular to thehorizontal magnetic field. However, since a velocity component of avertical magnetic field is small in an erosion area, the sheath electricfield is approximately orthogonal to the magnet.

Accordingly, a formula is obtained as follows.

[Eq. 5]

v _(⊥)≈√{square root over (2e|V _(DC) |/m _(e))}  Formula d

V_(DC): Self-bias voltage (DC voltage generated on the target 1 withrespect to the ground)

By substituting Formula d into Formula c, a formula is obtained asfollows.

$\begin{matrix}\left\lbrack {{Eq}.\mspace{14mu} 6} \right\rbrack & \; \\{r_{c} = {34\frac{\sqrt{{V_{D\; C}}(V)}}{B({Gauss})}({mm})\mspace{14mu} \ldots \mspace{14mu} {Formula}\mspace{14mu} e}} & \left( {{Formula}\mspace{14mu} 1} \right)\end{matrix}$

When the self-bias voltage V_(DC) and the magnetic flux density B arevaried, Larmor radiuses can be obtained as shown in Table 2. The erosionhalf-widths W at that time are shown in Table 3. Table 3 provides a casewhere the radius R of curvature of a magnetic field is 20 mm and anothercase where the radius R of curvature of a magnetic field is 10 mm.

TABLE 2 |V_(DC)|, Larmor radius (mm) in case of varying a magnetic fieldB(G) |V_(DC)| (V) 300 400 500 600 200 1.6 1.2 1.0 0.8 300 2.0 1.5 1.21.0 400 2.3 1.7 1.4 1.1 500 2.5 1.9 1.5 1.3 600 2.8 2.1 1.7 1.4

TABLE 3 B(G) |V_(DC)| (V) 300 400 500 600 Erosion half-width (mm) incase where a radius of curvature of a magnetic field is 20 mm 200 16.013.9 12.4 11.3 300 17.7 15.3 13.7 12.5 400 19.0 16.5 14.8 13.5 500 20.117.4 15.6 14.2 600 21.1 18.3 16.3 14.9 Erosion half-width (mm) in casewhere a radius of curvature of a magnetic field is 10 mm 200 11.3 9.88.8 8.0 300 12.5 10.9 9.7 8.9 400 13.5 11.7 10.4 9.5 500 14.2 12.3 11.010.1 600 14.9 12.9 11.5 10.5

However, in the magnetron sputtering apparatus in accordance with thepresent invention, the horizontal magnetic field loop is not a circlehaving a perfect axial symmetry, like a plasma loop as illustrated inFIG. 6. Therefore, the horizontal magnetic field (i.e., Larmor radius)and the radius of curvature of a magnetic field are varied depending ona position within the loop.

Accordingly, the erosion half-width is also varied depending on aposition within the loop.

In the magnetron sputtering apparatus in accordance with the presentinvention, it is not obvious that a plasma density is uniform at anyposition within the horizontal magnetic field loop. However, assumingthat the plasma density is uniform at any position within the loop, thepresent inventors allowed a phase to be varied by rotating the magnet;calculated an erosion half-width for each case and an average phase; andobtained an erosion distribution of the target. Further, as a result ofcomparing the obtained erosion distribution with an actual erosiondistribution (experimental values), it is proved that they almostcorrespond to each other, as illustrated in FIG. 18. That is, in themagnetron sputtering apparatus in accordance with the present invention,it can be seen that the erosion distribution can be calculated by usinga formula that is obtained by using a horizontal magnetic field loopformed into a circle having a perfect axial symmetry as described above.

In other words, it can be seen that the target erosion distribution canbe calculated from the radius R of curvature of a magnetic field and theLarmor radius r_(c) of an electron (defined by the self-bias voltageV_(DC) and the magnetic flux density B).

Therefore, by selecting a configuration of each part of the magnetronsputtering apparatus in accordance with the present invention, it ispossible to calculate a consumption distribution of the target and thusto uniformize the target consumption distribution, i.e., to improve atarget use efficiency. Accordingly, a target use efficiency of about 80%or more, which can not be accomplished by a conventional technique, canbe accomplished by the present invention.

In other words, it is possible to obtain a magnetron sputteringapparatus having a magnet configuration in which a target use efficiencythat is determined by a target consumption distribution determined basedon Larmor radius defined by the generated self-bias voltage and a radiusof curvature of the magnetic field is set to be about 80% or more.

Hereinafter, a method of optimizing, i.e., uniformizing a targetconsumption distribution based on the above calculation will beexplained with reference to the drawings.

The present inventors took notice of a parameter, in particular, a shapeof the spiral-shaped plate magnet set 3 of the magnetron sputteringapparatus, and attempted to optimize the target consumption distributionbased on the above calculation.

Above all, a use efficiency as an indicator of optimization was defined.

As described above, when the magnetron sputtering apparatus is operated,the target 1 is activated and sputtered by the plasma, thus beingconsumed to a state illustrated in FIG. 21B from a state illustrated inFIG. 21A.

In this case, when a thickness 1 b of a rest of the most deeply consumedportion is about 5% of an initial thickness 1 a of the non-consumedtarget, the target is to be replaced in consideration of a target'slife. Assuming that the rotation axis of the rotary magnet set issufficiently long, the use efficiency can be expressed by the followingformula.

Use efficiency=Cross sectional area of consumed portion (planeperpendicular to an axial direction)/Initial cross sectional area  Formula f

The present inventors allowed a shape of the spiral-shaped plate magnetset 3 to be changed and calculated a target consumption distribution anda use efficiency based on Formula f as explained below.

First, a shape parameter of the spiral-shaped plate magnet set 3 usedwhen calculating the target consumption distribution and the useefficiency will be explained with reference to FIGS. 19 and 20.

As illustrated in FIG. 19, the spiral-shaped plate magnet set 3 is woundaround the column-shaped rotation shaft 2 and the adjacent spiral-shapedplate magnet sets 3 are spaced apart from each other at a distance s.

An extended direction of the spiral-shaped plate magnet set 3 isinclined with respect to the rotation axis of the column-shaped rotationshaft 2. Here, an acute angle therebetween is defined as a.

Further, if the number of the spiral-shaped plate magnet set 3 (thenumber m of loops) is increased without changing widths Wn and Ws of themagnets, an angle α of the spiral-shaped plate magnet set 3 with respectto the rotation axis is decreased as illustrated in FIG. 27. If adiameter Da of the rotary magnet, the widths Wn and Ws of the magnet,the distance s between the magnets and the number m of the loops areset, the angle α is automatically determined.

Furthermore, as illustrated in FIG. 19, the adjacent spiral-shaped platemagnet sets 3 have an N-pole and an S-pole respectively at the outsideof the column-shaped rotation shaft 2 in a diametrical direction, andthe spiral-shaped plate magnet set 3 has predetermined widths Wn and Ws.

In FIG. 19, the width of the spiral-shaped plate magnet set 3 having theN-pole at the outside of the column-shaped rotation shaft 2 in adiametrical direction is denoted as Wn, while the width o thespiral-shaped plate magnet set 3 having the S-pole at the outside of thecolumn-shaped rotation shaft 2 in a diametrical direction is denoted asWs.

Further, as illustrated in FIG. 20, the spiral-shaped plate magnet set 3has a thickness tm in a diametrical direction of the column-shapedrotation shaft 2.

Hereinafter, a result of optimizing the consumption distribution basedon the above-described parameter will be explained.

The present inventors took notice of the distance s between the magnetsof the spiral-shaped plate magnet set 3 illustrated in FIG. 19.

A target consumption distribution and a use efficiency are calculatedwhile varying the distance s between the magnets of the spiral-shapedplate magnet set 3 from about 8 mm to about 17 mm.

Further, the present inventors set the number of loops of thespiral-shaped plate magnet set 3 to 1; the diameter Da of the magnet toabout 150 mm; the widths Wn and Ws of the magnets to about 14 mm; andthe thickness tm of the magnet to about 12 mm. FIG. 22 illustrates acase where a distance s between magnets is set to be about 8 mm, about12 mm and about 17, respectively. A relationship between the distance sbetween magnets and a consumption distribution is shown in FIG. 23, anda relationship between use efficiency, a horizontal magnetic field and adistance between magnets is shown in FIG. 24.

It can be seen from FIG. 24 that when the magnet distance s is about 11mm or more, the stable use efficiency exceeding about 80% is obtainedand when the magnet distance s is about 12 mm, a highest use efficiencyis obtained.

Further, it is found that strength of the horizontal magnet fieldbecomes strong as the distance s between magnets is increased.

Thereafter, the present inventors took notice of a plate thickness tm ofthe spiral-shaped plate magnet set 3 illustrated in FIG. 20.

A target consumption distribution and a use efficiency are calculatedwhile varying the plate thickness tm of the spiral-shaped plate magnetset 3 from about 5 mm to about 15 mm.

Further, a diameter of the column-shaped rotation magnet is set to beabout 150 mm, a width of the magnet to about 14 mm and a distancebetween magnets to about 12 mm.

In this case, a relationship between a plate thickness tm and aconsumption distribution is shown in FIG. 25, and a relationship betweena use efficiency, strength of a magnetic field and a plate thickness isshown in FIG. 26.

As illustrated in FIG. 26, it can seen that if the plate thickness tm isin a range from about 5 mm to about 15 mm, the use efficiency exceedsabout 80%, and if the plate thickness tm is in a range from about 9 mmto about 12 mm, the use efficiency exceeds about 85%, so that a highestuse efficiency is obtained in this range.

Subsequently, the present inventors took notice of the number m of loopsof the spiral-shaped plate magnet set 3 illustrated in FIG. 19.

A target consumption distribution and a use efficiency are calculatedwhile varying the number m of loops of the spiral-shaped plate magnetset 3 from about 1 to about 5.

Further, a diameter of the column-shaped rotation magnet is set be toabout 150 mm, a width of the magnet to about 14 mm and a distancebetween magnets to about 12 mm.

In this case, a relationship between the number m of loops and an angleα is shown in FIG. 27, and a relationship between the number m of loopsand a consumption distribution is shown in FIG. 28. A relationshipbetween a use efficiency, strength of a magnetic field and the number mof loops is shown in FIG. 29.

As illustrated in FIG. 29, the use efficiency exceeds about 80%regardless of the number m of loops, but as the number m of loops isincreased, the use efficiency tends to decrease.

Further, it can be seen that the highest use efficiency can be obtainedwhen the number m of loops is 2, and a single loop or double loops aredesirable. A relationship between a use efficiency, strength of amagnetic field and an angle α is shown in FIG. 30 and the efficiencyexceeds about 80% in an angle range from about 57° to about 84°,desirably, from about 75° to about 85°. An inclined angle is desirablyclose to about 90° because the plasma loops move more uniformly withrespect to the target at this angle. An inclined angle in a conventionalmagnetron sputtering apparatus is about 49°, which may cause theconventional magnetron sputtering apparatus to have a target useefficiency of about 50%.

Then, the present inventors took notice of the width Wn of the magnetwith the N-pole facing a surface and the width Ws of the magnet with theS-pole facing the surface in the spiral-shaped plate magnet set 3illustrated in FIG. 19.

To be specific, the width Ws of the magnet with the S-pole facing thesurface is set to about 14 mm and the width Wn of the magnet with theN-pole facing the surface is set to about 14 mm and about 18 mm, andthen a target consumption distribution and a use efficiency arecalculated. In this case, a diameter of the magnet is set to about 150mm and a distance between magnets is set to about 12 mm.

FIG. 31 illustrates a diagram viewed from a target in a case where awidth Ws of an S-pole magnet is set to about 18 mm which is wider than awidth of an N-pole magnet and a loop shape is not much changed and onlya horizontal magnetic field is increased. FIG. 32 shows a relationshipbetween a width of the S-pole magnet and an consumption distribution,and FIG. 33 shows a relationship between a use efficiency and strengthof a horizontal magnetic field.

As shown in FIGS. 32 and 33, when the width Ws is about 18 mm, it ispossible to obtain the horizontal magnetic field strength of about 500Gauss or more, a consumption width of about 12 cm and the use efficiencyof about 87.6%. Therefore, it can be seen that the width of the S-polemagnet is desirably wider than that of the N-pole magnet.

Thereafter, a scale-up of the magnet was considered. FIG. 34 illustrateserosion distribution when a magnet diameter is set to about 94 mm (here,a width of a plasma loop was about 76 mm and a width of a magnetic fieldexceeding about 500 G was about 42 mm), 150 mm and 260 mm (here, a widthof a plasma loop was about 118 mm and a width of a magnetic fieldexceeding about 500 G was about 50 mm). FIG. 35 illustrates arelationship between a width of a plasma loop and a width of erosion. Inthis case, one loop was used. As illustrated in FIG. 35, it can be seenthat even though the magnet diameter is increased, the width of erosionis not much increased, and it is desirable to use more than one magnethaving a diameter of about 150 mm. In particular, in order to perform ahigh speed film formation on a large-sized substrate, it is desirable toarrange more than one rotary magnet plasma excitation unit in a movingdirection of the substrate such that a rotation axis is orthogonal tothe moving direction of the substrate.

Further, there is no limitation on a parameter for obtaining a useefficiency of about 80%, and various kinds of parameters can beselected. However, it can be seen that variation of the self-biasvoltage in a range from about 100 V to about 700 V does not much affectthe target use efficiency. Therefore, each parameter of a magnetconfiguration is important.

As described above, in accordance with the sixth embodiment, it can beseen that the consumption distribution of the target is simulated withthe radius of curvature of the magnetic field and the Larmor radius ofthe electron and in this simulation, the target use efficiency of about80% or more is obtained by adjusting parameters such as the distance sbetween the magnets of the spiral-shaped plate magnet set 3, the numberm of the loops of the spiral-shaped plate magnet set 3, the magnet platethickness tm, a difference between the width Wn of magnet with theN-pole facing the surface and the width Ws of the magnet with the S-polefacing the surface and the diameter of the rotary magnet.

Hereinafter, a method for improving a material use efficiency byconsuming a material of the target without waste will be discussed.Referring to FIG. 36, some material particles sputtered from the target1 are adhered on the plasma shield member 16. Assuming that a depositefficiency is calculated by dividing the total amount of the materialparticles sputtered from the target 1 by the total amount of thematerial particles deposited on the substrate 10, the material useefficiency can be obtained by multiplying the target use efficiency bythe deposit efficiency. Accordingly, in order to improve the materialuse efficiency, it is necessary to increase the target use efficiencyand also to increase the deposit efficiency, as described above. Inorder to do so, as illustrated in FIG. 37, it is desirable to adjust awidth of a slit 18 to be approximated to the width of the plasma to makea difference therebetween less than about 20 mm, desirably, about 10 mm.Further, the slit 18 and the plasma shield member 16 are positioned asclosely as possible to the target (a distance therebetween is desirablyin a range of about 15 mm to 3 mm).

A relationship between each parameter and a material use efficiency isshown in Table 4. In order to improve the material use efficiency, it isnecessary to improve the target use efficiency, increase the width ofthe plasma, approximate the width of the slit to the width of the plasmaand position the slit as closely as possible to the target, as describedabove.

TABLE 4 Width of high density plasma: 120 mm, Distance between targetand slit: 15 mm Total material use Target use Deposit efficiency on Siltefficiency (%) efficiency (%) substrate (%) width (mm) 24 50 48 60 32 5063 80 44 50 88 120 53 60 88 120 82 85 96 120 91 95 96 120

The size of the magnet and the size of the substrate are not limited tothe above-described embodiments. Further, in the above embodiments,though the surface magnetic pole of the peripheral stationary magnet isset to be an S-pole, it may be set to be an N-pole. In this case, thewidth of the spiral-shaped plate magnet with an N-pole is needed to bewider than that of the spiral-shaped plate magnet with an S-pole.

Further, in the sixth embodiment, each plate magnet of the spiral-shapedplate magnet sets 3 is magnetized in a direction perpendicular to itsplate surface, and the plate magnets are fixed to the column-shapedrotation shaft 2 in a spiral shape to form plural spirals. The spiralsadjacent to each other in the axis direction of the column-shapedrotation shaft 2 have different magnetic poles, i.e., an N-pole and anS-pole on outer sides of the column-shaped rotation shaft 2 in itsdiametrical direction, in the same manner as the first embodiment.

Furthermore, in the sixth embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas a spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one (first spiral) of the adjacent spirals is magnetized inadvance, the other (second spiral) may be made of a non-magnetizedferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) on its surface in a loop shape can beformed. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Seventh Embodiment

A seventh embodiment of the present invention will be explained indetail with reference to FIGS. 38 and 39. Further, descriptions of thesame parts as those of the aforementioned embodiments will be omittedfor the simplicity of description. A magnetron sputtering apparatus inaccordance with the present invention is provided with a free rotarymagnet (moving magnet) 21 between an end portion of a spiral-shapedstationary magnet set 3 illustrated in the first embodiment and a shortside of a stationary outer peripheral plate magnet 4 orthogonal to therotation axis direction.

As illustrated in FIGS. 38 and 39, the free rotary magnet (movingmagnet) 21 is installed between the end portion of the spiral-shapedstationary magnet set 3 and the short side of the stationary outerperipheral plate magnet 4 orthogonal to the rotation axis direction.

The moving magnet 21 is formed in a column shape and includes a rotationshaft 21 a parallel to the short side of the stationary outer peripheralplate magnet 4. The moving magnet 21 can be freely rotated on therotation shaft 21 a in a direction of B1 as indicated in FIG. 39.

Further, the moving magnet 21 is magnetized in a direction perpendicularto the rotation shaft 21 a.

The moving magnet 21 is desirably made of a magnet having a highresidual magnetic flux density, a high coercive force and high energyproduct in order to weaken a strong magnetic field. In the presentembodiment, SS400 containing Fe as a major component is used for themoving magnet 21.

Furthermore, a surface of the moving magnet is desirably covered with anon-magnetic substance having a corrosion resistance to the plasma.

If the surface of the moving magnet 21 is covered with the non-magneticsubstance (not illustrated), it is possible to prevent the surface ofthe moving magnet 21 from being corroded by the plasma and also preventparticles of the magnetic substance from being adhered on the surface fthe moving magnet 21. Accordingly, the inside of the apparatus isprevented from being contaminated.

The non-magnetic substance is desirably made of a material such asstainless or aluminum alloy having a corrosion resistance to the plasma.

Further, in the magnetron sputtering apparatus in accordance with thepresent invention, in order to prevent a temperature rise of the target,a coolant is circulated through a passage 8 to cool the target.Additionally or alternatively, cooling units may be installed in bothspaces which are in the vicinity of upper sides of both ends of thebacking plate 6 and below the spiral-shaped plate magnet sets 3.

Moreover, for example, by setting pressures in both spaces(depressurized) above and below the backing plate provided with thetarget to be substantially same, the backing plate can be thinner and,desirably, the backing plate can have a thickness equal to or less thanabout 30% of the initial thickness of the target.

Hereinafter, an erosion formation and an operation of the moving magnet21 during the erosion formation in accordance with the seventhembodiment will be explained in detail. In the same manner as the firstembodiment, in case that the spiral-shaped plate magnet sets 3 areformed by arranging a plurality of plate magnets on a column-shapedrotation shaft 2, an N-pole of the plate magnet is approximatelysurrounded by two S-poles adjacent to the N-pole and a S-pole of outerperipheral stationary magnet when the spiral-shaped plate magnet sets 3are viewed from the target side, as illustrated in FIG. 3. In thisconfiguration, magnetic force lines start from the N-pole of thespiral-shaped plate magnet sets 3 and end at the surrounding S-poles. Asa result, a multitude of closed plasma loops 301 are formed on thetarget surface spaced apart from a plate magnet surface at a certaindistance. Further, as the column-shaped rotation shaft 2 is rotated, themultitude of plasma loops 301 are moved in a rotation axis direction. InFIG. 3, the plasma loops 301 move in a direction indicated by an arrow.Besides, the plasma loops 301 are generated in sequence from one end ofthe spiral-shaped plate magnet set 3 and disappear in sequence at theother end thereof.

In the seventh embodiment like the first embodiment, if an argon gas isintroduced and plasma excitation is performed while rotating thecolumn-shaped rotation shaft 2, a plasma loop 601 is stably generatedfrom a left end of the rotation shaft and is moved with the rotation ofthe shaft, as illustrated in FIG. 6. Then, the plasma loop 601disappears stably to a right end of the rotation shaft, as can be seenfrom a right photograph of FIG. 6 (which shows, from top to bottom, astate of change as time passes).

In this condition, a target 1 is activated and sputtered by the gasexcited into plasma and a mounting table 19 is moved such that asubstrate 10 to be processed faces the target 1. Thus, the sputteredtarget 1 is deposited on a surface of the substrate 10, thereby forminga thin film thereon.

In this case, since a direction of a polarity of the spiral-shaped platemagnet set 3 changes as time passes, a polarity of a short side of thestationary outer peripheral plate magnet 4 becomes the same as apolarity of a facing surface of the spiral-shaped magnet depending on arotation coordinate, thereby forming a strong magnetic field.

For example, as illustrated in FIG. 39, when an end surface of thespiral-shaped plate magnet set 3 with an S-pole facing toward thesurface is positioned to face the short side of the stationary outerperipheral plate magnet 4, a part of facing surfaces 23 may have thesame polarity of the S-poles. Accordingly, a strong magnetic field isformed due to repulsion between the same polarities.

At a region where the strong magnetic field is formed, a consumptionrate of the target 1 is relatively increased, so that an erosiondistribution becomes non-uniform.

If the erosion distribution is not uniform, target use efficiency isdeteriorated and a thickness of the formed thin film also becomesnon-uniform.

In the seventh embodiment, the moving magnet 21 which is freelyrotatable is installed between the facing surfaces 23 of thespiral-shaped plate magnet set 3 and the stationary outer peripheralplate magnet 4, so that the magnet 21 freely rotates to face the facingsurfaces 23 each having an opposite polarity to that of the movingmagnet 21, thereby weakening the strong magnetic field as illustrated inFIG. 39. Alternatively, by using a non-freely rotatable andnon-illustrated actuator or the like, the moving magnet 21 may besynchronized with rotation of the spiral magnet and rotated in adirection of B1 as indicated in FIG. 39 so as to face the facingsurfaces 23 each having an opposite polarity to that of the movingmagnet 21.

In accordance with the seventh embodiment, the magnetron sputteringapparatus includes the moving magnet 21 installed between the facingsurfaces 23 of the spiral-shaped plate magnet set 3 and the stationaryouter peripheral plate magnet 4, and the generated strong magnetic fieldis reduced by rotating the moving magnet 21 to face the facing surfaces23 each having an opposite polarity to that of the moving magnet 21.

As a result, the strong magnetic field generated from the end portion ofthe spiral magnet can be reduced from about 700 G or more to about 600G. Accordingly, a local consumption of the target 1 can be prevented andan erosion distribution becomes uniform, thereby improving a target useefficiency.

Further, in the seventh embodiment, each plate magnet of thespiral-shaped plate magnet set 3 is magnetized in a directionperpendicular to its surface, and the plate magnets are fixed to thecolumn-shaped rotation shaft 2 in a spiral shape to form plural spirals.The spirals adjacent to each other in the axis direction of thecolumn-shaped rotation shaft 2 have different magnetic poles, i.e., anN-pole and an S-pole on outer sides of the column-shaped rotation shaftin its diametrical direction, in the same manner as the firstembodiment.

Furthermore, in the seventh embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas a spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one (first spiral) of the adjacent spirals is magnetized inadvance, the other (second spiral) may be made of a non-magnetizedferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) on its surface in a loop shape can beformed. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Eighth Embodiment

An eighth embodiment of the present invention will be explained indetail with reference to FIGS. 40 to 42. Further, descriptions of thesame parts as those of the aforementioned embodiments will be omittedfor the simplicity of description.

As illustrated in FIGS. 40 to 42, in a magnetron sputtering apparatus inaccordance with the present invention, moving magnets 33 are installedat both end portions of the spiral-shaped magnet between a lateralsurface of a column-shaped rotation shaft 2 and a long side of astationary outer peripheral plate magnet 4.

The moving magnets 33 are formed in a column shape and include arotation shaft 33 a parallel to the rotation axis of the column-shapedrotation shaft 2. The moving magnets 33 can be rotated on the rotationshaft 33 a in a direction of B2 as indicated in FIG. 42 by usingnon-illustrated actuators.

Further, the moving magnets 33 are magnetized in a directionperpendicular to its rotation direction.

Hereinafter, operations of the moving magnets 33 will be explained.

As described above, the magnetron sputtering apparatus in accordancewith the present invention performs a film formation while rotating thespiral-shaped plate magnet set 3, so that a direction of a polarity ofthe spiral-shaped plate magnet set 3 changes as time passes.

Therefore, a polarity of a long side of the stationary outer peripheralplate magnet 4 becomes the same as a polarity of a facing surface of thespiral-shaped magnet depending on a rotation coordinate, whereby astrong magnetic field may be formed.

For example, as illustrated in FIG. 42, when a lateral surface of thespiral-shaped plate magnet set 3 with an S-pole facing toward thesurface is positioned to face the long side of the stationary outerperipheral plate magnet 4, a part of facing surfaces 23 a may have thesame polarity of the S-poles. Accordingly, a strong magnetic field isformed due to repulsion between the same polarities.

At a region where the strong magnetic field is formed, a consumptionrate of the target 1 is relatively increased, so that an erosiondistribution becomes non-uniform.

If the erosion distribution is not uniform, target use efficiency isdeteriorated.

In the eighth embodiment, the moving magnet 33 is installed between thefacing surfaces 23 a of the spiral-shaped plate magnet set 3 and thestationary outer peripheral plate magnet 4. By using a non-illustratedactuator or the like, the moving magnet 33 may be rotated in a directionof B2 as indicated in FIG. 42 so as to face the facing surfaces 23 aeach having an opposite polarity to that of the moving magnet 33,thereby weakening the generated strong magnetic field as illustrated inFIG. 42. The moving magnet 33 may be freely rotated.

That is, the magnetic field is controlled by using the moving magnet 33,so that an erosion distribution can be uniform and consumption of thetarget 1 and a thickness of the formed thin film can be uniform, therebyimproving a target use efficiency.

In accordance with the eighth embodiment, the magnetron sputteringapparatus includes the moving magnet 33 installed between the lateralsurface of the column-shaped rotation shaft 2 and the long side of thestationary outer peripheral plate magnet 4, and the generated strongmagnetic field is reduced by rotating the moving magnet 33 to face thefacing surfaces 23 a each having an opposite polarity to that of themoving magnet 33.

Accordingly, the eighth embodiment has the same effect as the seventhembodiment.

Further, in the eighth embodiment, each plate magnet of thespiral-shaped plate magnet set 3 is magnetized in a directionperpendicular to its surface, and the plate magnets are fixed to thecolumn-shaped rotation shaft 2 in a spiral shape to form plural spirals.The adjacent spirals in the axis direction of the column-shaped rotationshaft 2 have opposite magnetic poles, i.e., an N-pole and an S-pole onouter sides of the column-shaped rotation shaft 2 in its diametricaldirection, in the same manner as the first embodiment.

Furthermore, in the eighth embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one (first spiral) of the adjacent spirals is magnetized inadvance, the other (second spiral) may be made of a non-magnetizedferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) can be formed on its surface in aloop shape. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Ninth Embodiment

A ninth embodiment of the present invention will be explained in detailwith reference to FIGS. 43 and 44. Further, descriptions of the sameparts as those of the aforementioned embodiments will be omitted for thesimplicity of description.

As illustrated in FIGS. 43 and 44, in a magnetron sputtering apparatus,moving magnets 43 are respectively installed between the lateral surfaceof a column-shaped rotation shaft 2 and the long side of the stationaryouter peripheral plate magnet 2 and can be moved in an axis direction ofthe column-shape rotation shaft 2.

The moving magnet 43 is formed in a column shape and can be moved in adirection of B3 as indicated in FIG. 44, i.e., in the axis direction ofcolumn-shape rotation shaft 2 by using a non-illustrated actuator.

Further, the moving magnets 43 are magnetized in a directionperpendicular to its moving direction.

Hereinafter, an operation of the moving magnet 43 will be explained.

As described above, since a direction of a polarity of a spiral-shapedplate magnet set 3 changes as time passes, a polarity of the stationaryouter peripheral plate magnet 4 becomes the same as a polarity of afacing surface of the spiral-shaped plate magnet set 3 depending on arotation coordinate, whereby a strong magnetic field may be formed.

For example, as illustrated in FIG. 44, when a part of a lateral surfaceof the spiral-shaped plate magnet set 3 with an S-pole facing thesurface is positioned to face the long side of the stationary outerperipheral plate magnet 4, a part of facing surfaces may have the samepolarity of the S-poles. Accordingly, a strong magnetic field is formeddue to repulsion between the same polarities.

At a region where the strong magnetic field is formed, a consumptionrate of the target 1 is relatively increased, so that an erosiondistribution becomes non-uniform.

If the erosion distribution is not uniform, a consumption of the target1 is not uniform and target use efficiency is deteriorated.

In the ninth embodiment, the moving magnets 43 are installed between thefacing surfaces of the spiral-shaped plate magnet set 3 and thestationary outer peripheral plate magnet 4. By using a non-illustratedactuator or the like, the moving magnet 43 may be moved in a directionof B3 as indicated in FIG. 44 so as to face the facing surfaces eachhaving an opposite polarity to that of the moving magnet 43, therebyreducing the generated strong magnetic field.

That is, the magnetic field is controlled by using the moving magnet 43,so that an erosion distribution can be uniform and consumption of thetarget 1 and a thickness of the formed thin film can be uniform, therebyimproving a target use efficiency.

Further, the moving magnet 43 may be configured to be rotated in theaxis direction of the column-shaped rotation shaft 2.

With this configuration, the ninth embodiment has the same effect as theeighth embodiment.

In accordance with the ninth embodiment, the magnetron sputteringapparatus includes the moving magnet 43 installed between the lateralsurface of the column-shaped rotation shaft 2 and the stationary outerperipheral plate magnet 4, and the generated strong magnetic field isweakened by moving the moving magnet 43 to face the facing surfaces eachhaving an opposite polarity to that of the moving magnet 43.

Accordingly, the ninth embodiment has the same effect as the eighthembodiment.

Further, in the ninth embodiment, each plate magnet of the spiral-shapedplate magnet set 3 is magnetized in a direction perpendicular to itssurface, and the plate magnets are fixed to the column-shaped rotationshaft 2 in a spiral shape to form plural spirals. The spirals adjacentto each other in the axis direction of the column-shaped rotation shaft2 have different magnetic poles, i.e., an N-pole and an S-pole on outersides of the column-shaped rotation shaft 2 in its diametricaldirection, in the same manner as the first embodiment.

Furthermore, in the ninth embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one of the adjacent spirals is magnetized in advance (i.e., it isa magnet), the other may be made of a non-magnetized ferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) can be formed on its surface in aloop shape. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Tenth Embodiment

A tenth embodiment of the present invention will be explained in detailwith reference to FIG. 45. Further, descriptions of the same parts asthose of the aforementioned embodiments will be omitted for thesimplicity of description.

As illustrated in FIG. 45, a collimator 51 is installed in a slit 18 ina plasma shield member 16 and the slit 18 is positioned to face thetarget 1.

The collimator 51 is fixed to the plasma shield member 16.

The collimator 51 is made of, e.g., Ti, Ta, Al, stainless steel or metalcontaining these materials.

Further, the collimator 51 is connected with a non-illustrated powersupply circuit that applies a voltage to the collimator 51 and serves asa removal unit. A target alignment mechanism is made up of thecollimator 51 and the power supply circuit.

When the magnetron sputtering apparatus is operated, sputtered targetmaterials reach the collimator 51 and target materials having differentdirections and angles from those of the collimator 51 are reflected bythe collimator 51 or adhered to the collimator 51.

Accordingly, angles of the target materials reaching a substrate 10 tobe processed (which is moved to right side in the drawing to bepositioned right below the slit 18) can be adjusted to be identical witheach other.

The target materials adhered to the collimator 51 can be removed by thenon-illustrated power supply circuit as the removal unit for applying avoltage to the collimator 51.

Further, in the tenth embodiment, each plate magnet of the spiral-shapedplate magnet set 3 is magnetized in a direction perpendicular to itssurface, and the plate magnets are fixed to the column-shaped rotationshaft 2 in a spiral shape to form plural spirals. The adjacent spiralsin the axis direction of the column-shaped rotation shaft have oppositemagnetic poles, i.e., an N-pole and an S-pole on outer sides of thecolumn-shaped rotation shaft 2 in its diametrical direction, in the samemanner as the first embodiment.

Furthermore, in the tenth embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one (first spiral) of the adjacent spirals is magnetized inadvance, the other (second spiral) may be made of a non-magnetizedferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) can be formed on its surface in aloop shape. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Eleventh Embodiment

An eleventh embodiment of the present invention will be explained indetail with reference to FIG. 46. Further, descriptions of the sameparts as those of the aforementioned embodiments will be omitted for thesimplicity of description. In the present embodiment, a collimator 61 isinstalled to cover a substrate 10 to be processed instead of beinginstalled in a slit 18 and the collimator 61 and the substrate 10 aretransferred together.

The collimator 61 covers an upper surface of the substrate 10 but is notfixed to a main body of the sputtering apparatus.

With this configuration, the collimator 61 moves together with thesubstrate 10.

In this way, since the collimator 10 is configured to cover thesubstrate 10 and move with the substrate 10 as described above, anamount of target material to be adhered to the collimator 61 is reducedas compared to the tenth embodiment.

Further, in the eleventh embodiment, each plate magnet of thespiral-shaped plate magnet set 3 is magnetized in a directionperpendicular to its surface, the plate magnets are fixed to thecolumn-shaped rotation shaft 2 in a spiral shape to form plural spirals.The spirals adjacent to each other in the axis direction of thecolumn-shaped rotation shaft 2 have different magnetic poles, i.e., anN-pole and an S-pole on outer sides of the column-shaped rotation shaft2 in its diametrical direction, in the same manner as the firstembodiment.

Furthermore, in the eleventh embodiment, a stationary outer peripheralplate magnet 4 is configured to surround the rotary magnet set servingas spiral-shaped plate magnet set 3 when viewed from the target 1 andthe stationary outer peripheral plate magnet 4 is magnetized such thatits side facing the target 1 has an S-pole.

However, if the stationary outer peripheral plate magnet 4 is made of aferromagnetic body, it does not have to be magnetized in advance.

Further, as for the plate magnets of the spiral-shaped plate magnet set3, if one (first spiral) of the adjacent spirals is magnetized inadvance, the other may be made of a non-magnetized ferromagnetic body.

Even in this configuration, since the magnetized spiral magnetizesanother ferromagnetic body, a loop-shaped plane magnetic fieldsurrounding the N-pole (or S-pole) can be formed on its surface in aloop shape. Therefore, loop-shaped plasma in the same shape as aconventional one can be obtained.

Though the present invention has been explained with respect to theabove-described embodiments, a size of the magnet, a size of thesubstrate, and the like are not limited to the mentioned examples.

INDUSTRIAL APPLICABILITY

A magnetron sputtering apparatus in accordance with the presentinvention can be used not only for forming a thin film such as aninsulating film, a conductive film on a semiconductor wafer or the like,but also for forming various kinds of films on a substrate such as aglass substrate in a flat display device and for performing sputteringfilm formation in fabricating a memory device, a magnetic recordingdevice and other electronic devices.

What is claimed is:
 1. A magnetron sputtering apparatus for processing asubstrate, the apparatus comprising: a target holding member for holdinga target installed to face the substrate; and a magnet installed at aside opposite to the substrate across the target, wherein plasma isconfined on a surface of the target by forming a magnetic field on thetarget surface by the magnet, on the target surface, a plasma loop isformed around a region on a loop where a vertical magnetic fieldcomponent perpendicular to the target does not substantially exist whilea horizontal magnetic field component parallel to the target mainlyexists, and the horizontal magnetic field component at all position onthe loop where the horizontal magnetic field mainly exists is in a rangeof about 500 Gauss to 1200 Gauss.
 2. A magnetron sputtering apparatusfor processing a substrate, the apparatus comprising: a target holdingmember for holding a target installed to face the substrate; and amagnet installed at a side opposite to the substrate across the target,wherein plasma is confined on a surface of the target by forming amagnetic field on the target surface by the magnet, on the targetsurface, a plasma loop is formed around a region on a loop where avertical magnetic field component perpendicular to the target does notsubstantially exist while a horizontal magnetic field component parallelto the target mainly exists, and the horizontal magnetic field componentat all position on the loop where the horizontal magnetic field mainlyexists has a minimum value in a range of about 65% to 100% of a maximumvalue.
 3. A magnetron sputtering apparatus for processing a substrate,the apparatus comprising: a target holding member for holding a targetthat is arranged to face the substrate when processing the substrate;and a magnet installed at a side opposite to the substrate across thetarget, wherein the magnet comprises: a rotary magnet body installedaround a column-shaped rotation shaft in a spiral shape; and astationary outer peripheral body installed in the vicinity of the rotarymagnet body in parallel to a surface of the target, wherein the rotarymagnet body is formed by arranging a plurality of plate magnets on thecolumn-shaped rotation shaft such that an N pole of a plate magnet ofthe plurality of plate magnets is substantially surrounded by S poles ofother plate magnets of the plurality of plate magnets, plasma isconfined on the surface of the target by forming a magnetic field on thesurface of the target by the magnet, and the rotary magnet body rotateswith the column-shaped rotation shaft, so that a pattern of the magneticfield on the surface of the target moves as time passes, wherein atorque applied to the column-shaped rotation shaft due to an interactionbetween the rotary magnet body and the stationary outer peripheral bodyis in a range of about 0.1 N·m to 100 N·m, the rotary magnet bodyincludes a plurality of spiral bodies formed around the column-shapedrotation shaft, and forms a spiral-shaped magnet set in which adjacentspiral bodies in an axial direction of the column-shaped rotation shafthave opposite magnetic poles of an N pole and an S pole on an outer sideof the column-shaped rotation shaft in its diametrical direction, thestationary outer peripheral body is configured to surround the rotarymagnet body, and forms magnetic poles of an N pole or an S pole on aside facing the target or it is not previously magnetized, the rotarymagnet body is a spiral-shaped plate magnet set having plate magnetsinstalled on the column-shaped rotation shaft in a spiral shape to form2 spirals, adjacent spirals in an axial direction of the column-shapedrotation shaft have opposite magnetic poles of an N pole and an S poleon the outer side of the column-shaped rotation shaft in a diametricaldirection of the column-shaped rotation shaft, the column-shapedrotation shaft is made of a magnetic body having a hollow structure, anda thickness of the magnetic body is set such that a magnetic fluxdensity at an entire region in the magnetic body becomes equal to orless than about 65% of a saturated magnetic flux density of the magneticbody.
 4. The A magnetron sputtering apparatus for processing asubstrate, the apparatus comprising: a target holding member for holdinga target that is arranged to face the substrate when processing thesubstrate; and a magnet installed at a side opposite to the substrateacross the target, wherein the magnet comprises: a rotary magnet bodyinstalled around a column-shaped rotation shaft in a spiral shape; and astationary outer peripheral body installed in the vicinity of the rotarymagnet body in parallel to a surface of the target, wherein the rotarymagnet body is formed by arranging a plurality of plate magnets on thecolumn-shaped rotation shaft such that an N pole of a plate magnet ofthe plurality of plate magnets is substantially surrounded by S poles ofother plate magnets of the plurality of plate magnets, plasma isconfined on the surface of the target by forming a magnetic field on thesurface of the target by the magnet, and the rotary magnet body rotateswith the column-shaped rotation shaft, so that a pattern of the magneticfield on the surface of the target moves as time passes, wherein atorque applied to the column-shaped rotation shaft due to an interactionbetween the rotary magnet body and the stationary outer peripheral bodyis in a range of about 0.1 N·m to 100 N·m, the rotary magnet bodyincludes a plurality of spiral bodies formed around the column-shapedrotation shaft, and forms a spiral-shaped magnet set in which adjacentspiral bodies in an axial direction of the column-shaped rotation shafthave opposite magnetic poles of an N pole and an S pole on an outer sideof the column-shaped rotation shaft in its diametrical direction, thestationary outer peripheral body is configured to surround the rotarymagnet body, and forms magnetic poles of an N pole or an S pole on aside facing the target or it is not previously magnetized, the rotarymagnet body is a spiral-shaped plate magnet set having plate magnetsinstalled on the column-shaped rotation shaft in a spiral shape to form2 spirals, adjacent spirals in an axial direction of the column-shapedrotation shaft have opposite magnetic poles of an N pole and an S poleon the outer side of the column-shaped rotation shaft in a diametricaldirection of the column-shaped rotation shaft, the column-shapedrotation shaft is made of a paramagnetic body having a hollow structure,and a thickness of the paramagnetic body is set such that a magneticflux density at an entire region in the paramagnetic body becomessmaller than a residual magnetic flux density of the magnet forming therotary magnet body.
 5. A magnetron sputtering apparatus for processing asubstrate, the apparatus comprising: a target holding member for holdinga target installed to face the substrate; and a magnet installed at aside opposite to the substrate across the target, wherein plasma isconfined on a surface of the target by forming a magnetic field on thetarget surface by the magnet, a plurality of plasma loops is formed onthe target surface, a distance between the target surface and a surfaceof the substrate is set to be equal to or less than about 30 mm, and amagnetic field on the substrate surface is set to be equal to or lessthan about 100 Gauss.
 6. A magnetron sputtering apparatus for processinga substrate, the apparatus comprising: a target holding unit installedat a side opposite to the substrate across a target installed to facethe substrate; and a magnet installed to face the target via the targetholding unit, wherein plasma is confined on a surface of the target byforming a magnetic field on the target surface by the magnet, aplurality of plasma loops is formed on the target surface, and athickness of the target holding unit is set to be equal to or less thanabout 30% of an initial thickness of the target.
 7. The magnetronsputtering apparatus of claim 6, wherein a first space between thesubstrate and the target is capable of being depressurized, a secondspace between the target holding unit and the magnet is capable of beingdepressurized, and a pressure in the first space is substantially thesame as that in the second space.